工業技術研究院

技術簡介

本研究旨在開發高效能之「三端子異質堆疊太陽電池」，結合寬能隙鈣鈦礦上電池與矽基穿隧氧化層鈍化背接觸（TBC）下電池，以突破單接面電池效率極限並解決傳統二端子（2T）結構之電流匹配限制 。研究首先透過 TCAD 軟體建立光電聯合模擬平台，驗證了 3T 架構在功率解耦下的優勢，並預測其最佳化效率潛力可達 35.41％ 。在關鍵材料方面，成功開發出兼具高導電性（電阻率 9.37×10⁻⁴ Ω-cm）與高近紅外光穿透率（＞91％）的銦鋅氧化物（IZO）異質堆疊層，有效提升光譜利用率 。在製程整合上，本計畫利用雷射圖案化技術克服了 TBC 表面平坦化製程所導致的鈍化層損傷問題，成功完成實體元件整合 。最終實測結果顯示，三端子堆疊電池總效率達到 22.48％（上電池 16.81％、下電池 5.67％），確立了此技術路徑之可行性與未來應用潛力。

Abstract

This study aims to develop high-efficiency "Three-terminal (3T) Heterojunction Tandem Solar Cells" by integrating a wide-bandgap Perovskite top cell with a silicon-based Tunnel Oxide Passivated Contact (TBC) bottom cell. This architecture is designed to surpass single-junction efficiency limits and resolve the current matching constraints typical of two-terminal (2T) structures . First, a combined optical and electrical simulation platform was established using TCAD software, verifying the advantages of power decoupling in the 3T architecture and predicting a potential efficiency of 35.41％ . Regarding key materials, an Indium Zinc Oxide (IZO) interlayer was successfully developed, featuring both high conductivity (resistivity of 9.37×10?? Ω-cm) and high near-infrared transmittance (＞91％), thereby optimizing spectral utilization . For process integration, laser patterning technology was employed to overcome passivation damage caused by the planarization of the TBC surface, enabling successful device integration . The final experimental results demonstrate a total efficiency of 22.48％ for the 3T tandem cell (16.81％ for the top cell and 5.67％ for the bottom cell), achieving the annual technical target and confirming the feasibility and future potential of this technology path .

技術規格

1. 鈣鈦礦/矽晶三端子堆疊結構之光電模擬，效率達35.41％。本結果以實際材料參數，運用 Synopsys TCAD Sentaurus 建構，可提供製程導向設計依據，減少試製迭代並加速開發週期。 2. 透過濺鍍技術沉積氧化銦鋅(IZO)薄膜，並在O2流量5sccm條件下進行退火處理，獲得電阻率 9.37E-4 Ω-cm，穿透度91.06％ ＠波長800-1,200nm，符合作為三端子異質堆疊層之需求。 3. 由TBC下電池出發的3T整合製程路徑，成功導入所開發之3T異質堆疊層，藉由抑制上電池在近紅外(NIR)波段的吸收，將長波光能導入矽基下電池，有效提升其光吸收與電流輸出。最終3T堆疊電池效率達 22.48％。

Technical Specification

1. Optoelectronic simulation of Perovskite/Silicon three-terminal (3T) tandem structures achieved an efficiency of 35.41％. Developed using Synopsys TCAD Sentaurus with actual material parameters, these results provide a foundation for process-oriented design, reducing experimental iterations and accelerating the development cycle. 2. Indium Zinc Oxide (IZO) thin films were deposited via sputtering technology and annealed under an O₂ flow rate of 5 sccm. The resulting film achieved a resistivity of 9.37×10⁻⁴ Ω-cm and a transparency of 91.06％ at wavelengths of 800–1,200 nm, meeting the requirements for a three-terminal heterogeneous tandem layer. 3. A 3T integration process path starting from a TBC bottom cell successfully incorporated the developed 3T heterogeneous tandem layer. By suppressing top-cell absorption in the near-infrared (NIR) spectrum, long-wavelength light is directed into the silicon-based bottom cell, effectively enhancing light absorption and current output. The final 3T tandem cell efficiency reached 22.48％.

技術特色

1. 利用TCAD物理模型預測3T堆疊電池效率潛力達35.41％，建立超越傳統矽晶單接面理論極限（29.4％）的設計藍圖。 2. 開發之IZO透明導電層，具備近紅外光高穿透率與低電阻率，成功整合鈣鈦礦與TBC下電池，3T堆疊電池效率達22.48％。

應用範圍

光電、半導體，能源等相關產業

接受技術者具備基礎建議（設備）

太陽能電池製造廠及相關製程設備廠

接受技術者具備基礎建議（專業）

太陽光電電池原理及製程知識

聯絡資訊