工業技術研究院

技術簡介

以現有TOPCon設備為基礎，建構下世代高效電池之量產解決方案。研究採用異位摻雜（ex-situ doping）技術沉積多晶矽薄膜，透過優化前氧化流量與後氧化溫度，顯著提升鈍化品質，使N型與P型多晶矽之隱含開路電壓（iVoc）分別達到739 mV與712 mV。在金屬化製程方面，導入背面偏壓式雷射增強金屬化（BLEM）技術，有效修復接觸介面，將N區與P區之金屬接觸電阻分別降低至1.82 mΩ-cm²與2.94 mΩ-cm²。針對TBC複雜的背面結構，本研究建立「皮秒雷射搭配鹼蝕刻」之圖形化製程，確立第一道高重疊率與第二道雙掃描之最佳雷射窗口，成功在M10尺寸電池上實現低損傷與高選擇性之圖案化。最終整合製程並搭配絕緣膠設計解決量測跨極問題，TBC電池轉換效率達到25.08％（Voc 714 mV），證實了技術的可行性與量產潛力。

Abstract

This project aims to develop high-efficiency Tunnel Oxide Passivated Back Contact (TBC) crystalline silicon solar cell technology, establishing a mass-production solution based on existing TOPCon equipment. The study utilizes ex-situ doping technology for polysilicon film deposition. By optimizing pre-oxidation flow rates and post-oxidation temperatures, passivation quality was significantly improved, achieving implied open-circuit voltages (iVoc) of 739 mV for N-type and 712 mV for P-type polysilicon. For metallization, Biased Laser-Enhanced Metallization (BLEM) technology was introduced to repair the contact interface, reducing contact resistance to 1.82 mΩ-cm2 for the N-region and 2.94 mΩ-cm2 for the P-region. To address the complex rear-side structure of TBC cells, a patterning process combining picosecond laser and alkaline etching was established. An optimal laser processing window (high overlap for the first pass and double scan for the second) was defined, achieving low-damage and high-selectivity patterning on M10-sized cells. Through full process integration and the use of insulating paste to prevent measurement short circuits, the final TBC cell achieved a conversion efficiency of 25.08％ (Voc 714 mV), demonstrating the feasibility and mass-production potential of the technology.

技術規格

1. 採用ex-situ技術進行多晶矽摻雜，並在pre-oxidation階段提高氧氣流量，以提升摻雜的均勻性。接著透過 post-oxidation，避免因表面過度摻雜引起的高復合。iVoc (p/n)=712 mV / 739 mV。 2. 藉由調整多晶矽摻雜濃度與燒結條件，n型多晶矽實測接觸電阻可低至1.82  mΩ·cm²；p型多晶矽接觸電阻=2.94  mΩ·cm²。 3. 依據已完成之異位摻雜製程開發結果，進一步微調鈍化 接觸層摻雜濃度，同步優化退火溫度進一步降低J0並提升iVoc水準，iVoc=728 mV，J0=14.4 fA/cm2。 4. 透過雷射能量窗微調、光斑均勻化；同時適度調整PN寬度，在電極材料與接觸阻抗優化後，整體效率可達25.08％。

Technical Specification

1. Ex-situ technology was used for polysilicon doping, with increased oxygen flow during the pre-oxidation stage to improve doping uniformity. Post-oxidation was then applied to prevent high recombination caused by surface over-doping. iVoc (p/n) = 712 mV / 739 mV. 2. By adjusting polysilicon doping concentrations and sintering conditions, the measured contact resistance for n-type polysilicon reached as low as 1.82 mΩ·cm²; the contact resistance for p-type polysilicon was 2.94 mΩ·cm². 3. Based on the results of the completed ex-situ doping process development, the doping concentration of the passivation contact layer was further fine-tuned. The annealing temperature was also optimized to further reduce J0 and improve iVoc levels: iVoc = 728 mV, J0 = 14.4 fA/cm². 4. Through fine-tuning of the laser energy window and beam spot homogenization, combined with moderate adjustments to the PN width and optimization of electrode materials and contact resistance, the overall efficiency reached 25.08％.

技術特色

1.內容包含完整的太陽電池製作而非只有部分步驟。 2.技術可應用於PERx及TOPCon等鈍化改良太陽能電池，以及未來Tandem堆疊型電池之矽基下電池。

應用範圍

光電、半導體，能源等相關產業

接受技術者具備基礎建議（設備）

太陽能電池製造廠及相關製程設備廠

接受技術者具備基礎建議（專業）

太陽光電電池原理及製程知識

聯絡資訊