工業技術研究院

技術簡介

開發以矽晶太陽電池升級結合鈣鈦礦太陽電池之前瞻堆疊太陽電池技術。研究涵括鈣鈦礦、載子傳輸層與透明導電膜層等材料開發。在鈣鈦礦吸收層與電子傳輸層、電洞傳輸層之間進行介面鈍化，鈍化材料以自組裝層與銨鹽為主，電池開路電壓Voc可達1.17 V。以物理氣相沉積濺鍍方式沉積氧化銦鋅(Indium Zinc Oxide, IZO)透明導電薄膜作為上下電池的復合層(recombination layer)，可得片電阻481 Ω/sq，NIR波段穿透率95.3％。優化C60鍍膜速率，以雙層結構降低IZO濺鍍轟擊效應並降低厚度，堆疊電池效率提高至27.93％。

Abstract

To develop advanced tandem solar cell technology by upgrading conventional silicon solar cells through integration with perovskite solar cells. The research encompasses the development of materials including perovskite, carrier transport layers, and transparent conductive films. Interface passivation was carried out between the perovskite absorber layer and the electron transport layer as well as the hole transport layer, using self-assembled layers and ammonium salts as passivation materials. As a result, the cell achieved an open-circuit voltage (Voc) of 1.17 V. Using sputtering, an indium zinc oxide (IZO) transparent conductive film was deposited as the recombination layer between the top and bottom cells. This yielded a sheet resistance of 481 Ω/sq and a near-infrared transmittance of 95.3％. By optimizing the C60 coating rate, employing a double-layer structure to reduce the bombardment effect of IZO sputtering and minimize thickness, while simultaneously optimizing the perovskite solution concentration, the tandem cell efficiency was improved to 27.93％.

技術規格

1. 藉由調整Cs及Br的添加濃度，鈣鈦礦Cs0.3FA0.7Pb(I0.85Br0.15)3成份比具有合適的容忍因子(0.935)及能隙(1.655 V)組成。 2. 以PVD濺鍍方式沉積IZO薄膜作為上下電池的復合層，確保上下層的電荷能夠有效傳遞而不產生電流損耗。可得片電阻481 Ω/sq，NIR矽晶吸收波段波段穿透率95.3％。 3. 在鈣鈦礦吸收層與載子傳輸層間以自組裝層與銨鹽進行介面鈍化，減少界面載子復合，進而提升元件的開路電壓與穩定性，電池開路電壓Voc可達1.17 V。 4. 整合C60鍍膜品質優化，上透明電極IZO製程改善與調控厚度為70nm，堆疊電池效率提高至27.93％。

Technical Specification

1. The perovskite layer with a suitable tolerance factor (0.935) and bandgap (1.655 V) was developed by adjusting the additive concentrations of Cs and Br. 2. Indium zinc oxide (IZO) transparent conductive film was deposited as the recombination layer between the top and bottom cells by sputtering. This yielded a sheet resistance of 481 Ω/sq and a transmittance in NIR spectrum of 95.3％. 3. Interface passivation was carried out between the perovskite absorber layer and the carrier transport layer, using self-assembled layers and ammonium salts as passivation materials, to improve the open circuit voltage of the device. The cell achieved an open-circuit voltage (Voc) of 1.17 V. 4. By optimizing the C60 coating quality, employing IZO depositing process parameters and modulate the thickness to 70nm, the tandem cell efficiency was improved to 27.93％.

技術特色

2T堆疊結構研製與連續製程之整合，開發出效率達27.93％的2端點鈣鈦礦/矽晶堆疊太陽電池。

應用範圍

堆疊太陽電池

接受技術者具備基礎建議（設備）

相關鈣鈦礦或矽晶太陽電池設備

接受技術者具備基礎建議（專業）

化學、材料、化工、光電等相關技術人員

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