工業技術研究院

技術簡介

本晶圓式電漿感測系統採用與12吋製程晶圓相同尺寸與材質之感測晶圓，具備高度相容性，能直接進入製程反應腔體中，不影響原有設備運作，其透過內建多點感測元件，可即時量測電漿製程中的電漿特性參數，如: 電漿電位、浮動電位、電漿密度等關鍵參數。 相較於傳統診斷系統於腔體外部侵入進行單點感測方式，本系統能快速透過感測晶圓多點蒐集的數據，提供更接近實際製程條件下的真實量測資訊，並可完整反映製程腔體中不同位置的電漿行為，將有效協助製程優化、故障診斷與設備維護。此技術將能應用於先進半導體製程中的電漿蝕刻與薄膜沉積設備，能大幅提升製程控制精度、穩定性與最終產品良率，並有助於縮短製程開發週期與降低生產成本。

Abstract

The wafer-based plasma sensing system utilizes a sensor wafer that matches the size and material of a 12-inch process wafer, ensuring high compatibility and allowing it to enter the process chamber without affecting existing equipment operations. Equipped with built-in multi-point sensors, the system can perform real-time measurements of key plasma parameters such as plasma potential, floating potential, and plasma density during plasma processes. Compared to traditional diagnostic systems that rely on intrusive, single-point measurements from outside the chamber, this system rapidly collects data from multiple points across the sensor wafer, providing accurate and representative measurements under actual process conditions. It enables comprehensive monitoring of plasma behavior across different locations in the chamber, which significantly aids in process optimization, fault diagnosis, and equipment maintenance. This technology is particularly suited for advanced semiconductor processes such as plasma etching and thin-film deposition, offering substantial improvements in process control precision, stability, and final product yield. Additionally, it helps shorten process development cycles and reduce manufacturing costs.

技術規格

1. 19點量測＠12”wafer 2.電漿密度量測範圍(108 cm-3 to 1012 cm-3)

Technical Specification

1.Supports 19 point plasma diagnostics on a 12-inch wafer 2.Plasma density measurement capability: 10⁸ cm⁻³ to 10¹² cm⁻³

技術特色

晶圓式電漿感測系統技術不需停機或改機，就能即時看見電漿運作狀態。設備可依量測結果即時調整製程條件，讓加工更穩定、品質更一致。對設備商而言，這是一個可直接加值的標準模組，能提升設備差異化與市場競爭力；對晶圓廠而言，則可減少試產時間與良率風險，降低成本並加快量產導入。

應用範圍

光電、半導體電漿製程相關設備產業

接受技術者具備基礎建議（設備）

12吋真空電漿設備

接受技術者具備基礎建議（專業）

需具備有電漿物理、電控與機械經驗之開發人員

聯絡資訊