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工業技術研究院

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技術名稱: 700V LDMOS 元件製程技術

技術簡介

根據製程與元件模擬設計之分離式功率電子開關, 採用橫向式閘極結構設計與製程

Abstract

By using lateral gate structure to design the discrete switch, we can achieve the Power IC for high voltage & low resistance property. This process technology can easily integrate with CMOS process.

技術規格

VBD≧700V、Rdson ≦39Ω-mm2

Technical Specification

VBD≧700V、Rdson ≦39Ω-mm2

技術特色

.與現今標準CMOS製程相容 .低Rdson

應用範圍

高功率、低阻抗之電子開關,如電子式變壓器、電漿顯示器驅動、液晶顯示器背光燈源、智慧型電池充電器、單晶式整合型智慧功率IC

接受技術者具備基礎建議(設備)

具元件開發能力之半導體廠

接受技術者具備基礎建議(專業)

CMOS製程技術相關元件之設計、製造能力

技術分類 製程

聯絡資訊

聯絡人:鍾佩翰 奈米電子元件技術組

電話:03-5912777 或 Email:stephen.chung@itri.org.tw

客服專線:+886-800-45-8899

傳真:03-5917690

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