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Process Capability

Photolithography module

Equipment

Specification

Aligner & Exposure

350 W/1000 W Hg Lamp; Resolution >3μm Double Side Alignment

Auto Track System coater & development

Cassette Input/Output; Coater, Developer, Hot Plates, Chill Plates, Robot

Oven

Topside/Backside Baking; Temperature ~ 300oC

Dry Photo-resist Stripper

O2 Plasma

 

Wafer bonding module

Equipment

Specification

Wafer Bonder & aligner

Wafer size:4", 6", 8”

 

Wet etch module

Equipment

Specification

Etching Bench

BOE; HF; Al etchant; H2SO4; KOH; TMAH ; KI; Cr7

Spin Dryer

Wafer size:4", 6", 8”

RCA Clean Bench

SC1 , SC2 , H2SO4 , DHF   

 

Dry etching module

Equipment

Specification

Reactive Ion Etcher (RIE)

Etch material: Si3N4; SiO2

Inductive Couple Plasma (ICP)

Etch material: Si, Poly-Si

Deep RIE

Etch material: Si3N4; SiO2

XeF2 Etcher

Etch material: Si

 

CVD module

Equipment

Specification

Plasma-enhanced chemical vapor deposition, PECVD

Si3N4; SiO2, a-Si, SiC

High Rate PECVD

Si3N4; SiO2, a-Si, SiC

Atmospheric Pressure chemical vapor deposition, APCVD

Thermal Oxide

Furnace / RTA

Anneal 350~1100℃

Low Pressure chemical vapor deposition, LPCVD

Low Stress Si3N4

Low Pressure chemical vapor deposition, LPCVD

Poly-Si : In situ Phosphor Doped

 

PVD module

Equipment

Specification

Sputter

Al、Cr、Au、Ti、Pt、Cu、Ni…etc. and SiO2

E-Gun Evaporator

Al、Cr、Au、Ti、Pt、Ni…etc. and SiO2

 

Monitor module & Dicing

Equipment

Specification

Scanner Electron Microscope

Image resolution: 3nm; Range: 25x~10kx; Specimen size : φ125 mm

Nanospec

Wafer size:4~6"; UV light(thin film range): 25Å~500Å

Visible light (thick film range): 500~200KÅ

4-Point Probe

Measurement range :5mΩ/□~5MΩ/□Specimen size :4"~8"

Prism Coupler

Thickness range: 1~15μm; Index accuracy : 0.01; Index resolution: 0.0005

α-Step

Scan length :10mm ,Horizontal Resolution : 0.01μm(At 2 μm/s) Step height repeatability :300μm

Thin Film Stress Measurement

Specimen size :4"~8"; resolution :0.00003/m; Temp. Range < 500°C

Laser Surface Profile Scan

Measurement spot <1.5μm; step roughness: 25nm; work piece height :1.5mm

Probe Station

Travel speed :0.45”/sec; Accuracy of positioning better than 3um Stage resolution :0.1μm

Wafer Dicing Saw

4"~6" Si、Glass wafer; Scribe line≒100μm (For Si )



Files:Process Capability(PDF)(Download)

Cantact

Chung-Chien Hsiao
Tel:+886-3-5913989
E-mail:itri527132@itri.org.tw