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Services

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Process Service

Device name

Specification

Photolithography  Process

Mask Aligner

350 W/1000 W Hg Lamp; Resolution >3mm Double Side Alignment

Auto Track System

Cassette Input/Output; Coater, Developer, Hot Plates, Chill Plates, Robot

Thick Photo-resist Coater

Maximum Spin Speed (Close): 3000 rpm

IR Oven

Topside/Backside Baking; Temperature ~ 350oC

Dry Photo-resist Stripper

O2 Plasma

Laser Writer

5"MASK

Wet Etching Process

Etching Bench

BOE; HF; Al etchant; H2SO4; KOH; KI; Cr7

Spin Dryer

4", 6"

RCA Clean Bench

NH4OH Tank , HCl Tank , H2SO4 Tank, HF Tank  

Dry Etching Process

Reactive Ion Etcher (RIE)

Etching material : Si3N4; SiO2

Inductive Couple Plasma (ICP)

Etching material : Si, Poly-Si

Deep RIE

Etching material : Si3N4; SiO2

XeF2 Etcher

Etching material : Si

Chemical Vapor Deposition

PECVD

Si3N4; SiO2, a-Si, SiC

High Rate PECVD

Si3N4; SiO2, a-Si, SiC

APCVD

Thermal Oxide, Anneal 350~1100

LPCVD

Low Stress Si3N4, Poly-Si : In situ Phosphor Doped

Metal Thin Film Deposition

Sputter

AlCrAuTiPtCuNiSiO2

E-Gun Evaporator

AlCrAuTiPtNiSiO2

Process Monitoring Service

Scanner Electron Microscope

Image resolution: 3nm; Range: 25x~10kx; Specimen size : φ125 mm

Nanospec

For 4~6"; UV light(thin film range): 25Å~500Å

Visible light (thick film range): 500~200KÅ

4-Point Probe

Measurement range :5mΩ/□~5MΩ/□Specimen size :4"~8"

Prism Coupler

Thickness range: 1~15μm; Index accuracy : 0.01; Index resolution: 0.0005

α-Step

Scan length :10mm ,Horizontal Resolution : 0.01μm(At 2 μm/s) Step height repeatability :300μm

Thin Film Stress Measurement

Specimen size :4"~8"; resolution :0.00003/m

Wafer Dicing Saw

4"~6" SiGlass wafer; Scribe line100μm (For Si )

Files:Process Services(PDF)(Download)

Cantact:Chung-Chien Hsiao

Tel:+886-3-5913989

E-mail:itri527132@itri.org.tw