The semiconductor industry has urgent demand for low temperature annealing process and equipment, as they are more effective in restraining diffusion for ion implantation than conventional rapid thermal annealing (RTA) or laser annealing techniques. CINmat Microwave Annealing Technology, the result of a tripartite collaboration between ITRI, National Chiao Tung University, and National Nano Device Laboratories, aims to solve the dopant diffusion issue of 12” wafers in the 5 nm semiconductor process and achieve dopant activation in the front end of line (FEOL).