GaN on X-Substrate Power and Rf HEMT.
Technology Overview
ITRI develops core technologies for the epitaxy of GaN-based high electron mobility transistor (HEMT) structures and field effect transistor (FET) devices, providing:
- Epitaxial verification for RF Power Amplifiers and Power Switches on novel substrate materials
- Process verification of ampere-level FET devices and breakdown voltage characteristics for both enhancement-mode and depletion-mode epitaxial wafers
Applications & Benefit
ITRI endeavors in the development of the core epitaxial technologies for GaN-based HEMT as follows:
(1) Epitaxy technology for GaN-based HEMT structures, including:
- Development of novel substrates and buffer layers
- Stress and warpage management of epitaxial layers
- Design of ultra-thin gate epitaxy for normally-off operation
(2) Fabrication technology for GaN-based HEMT FET devices, including:
- High-selectivity etching of GaN/AlGaN
- Low contact resistance metal structure design
- Breakdown voltage testing of epitaxial wafers
- Verification of ampere-level devices
From an industry perspective, ITRI’s GaN devices are well-suited for high-frequency, high-power, radiation-resistant, and high-temperature applications, such as 5G base stations, satellite communications, AI servers, robotics, and energy management systems for electric vehicles.
We aims to provide a one-stop service with strong customization flexibility and market connection, and eventually strengthen the autonomy and advancement of Taiwan's Power HEMT and beyond 5G supply chain.