Technology Overview
GaN on X-substrate Power and Rf HEMT.
For high-speed and high-power applications, the semiconductor devices require a high breakdown voltage (Vbd) and a high saturation carrier velocity simultaneously. Since the device breakdown is caused by the band-to-band impact ionization effect due to the accelerated carriers under a strong electric field, wide bandgap semiconductor materials have an inherent advantage for high Vbd devices, for example, gallium nitride (GaN, Eg=3.42 eV). Due to polarization discontinuity between AlGaN and GaN, two-dimensional electron gas (2DEG) forms at the AlGaN/GaN heterostructure, which also has a superior carrier mobility for high-speed devices. Therefore, GaN-based high electron mobility transistor (HEMT) is very suitable for special applications in high frequency, high power, anti-radiation and high temperature environments. The practical application ranges from high-power amplifiers for 5G base stations, military radars, rechargeable batteries, and power management system in automotive etc.
Applications & Benefits
ITRI endeavors in the development of the core epitaxial technologies for GaN-based HEMT, such as bellowed:
- The innovation in substrate and buffer layers
- Strain and warpage management
- The design and the growth of normally-off ultra-thin AlGaN barrier for gate electrodes.
For industry, ITRI provides an integration service from the upstream substrate & epitaxy manufacturer to the downstream module & design house in Taiwanese high-frequency and high-power industry.
ITRI aims to provide a one-stop service with strong customization flexibility and market connection, and eventually strengthen the autonomy and advancement of Taiwan's Power HEMT and beyond 5G supply chain.