Technology Overview
GaN-based sub-THz technology.
GaN based HEMT has excellent high frequency characteristics and is conceived as the best candidate to fulfill the requirements of high power, high efficiency and operation in rugged environments of 5G beyond PA applications.
Applications & Benefits
We provide the industry a cost effective, high performance GaN HEMT solution on 4" and 8" wafer for PA applications, in the meantime, through co-working with the players in the field to expedite the maturity of the technology.
◆ 4” GaN/Si (AlGaN-barrier) RF HEMT - Lift-off (Au-based) Process
◆ 8” GaN/Si (AlGaN-barrier) RF HEMT - CMOS-compatible (Au-free) Process
The ultimate goal is to link the industry based on the core technology to provide a sound foundation for 5G/6G industry and accelerate the realization of a B5G/6G connected world.