1200 V Vertical GaN-on-GaN Diode.
Technology Overview
The 1200 V vertical gallium nitride diode developed by ITRI utilizes advanced epitaxial layer optimization with bulk GaN substrates and uniform heat dissipation technology to achieve a low on-resistance (Ron ≤ 80 mΩ) and high current-carrying capability. With a low turn-on voltage (Vf ≤ 2 V), this design effectively reduces conduction losses.
Technology Features
1200 V Vertical GaN-on-GaN Diode
- Turn-on voltage: Vf ≤ 2 V
- On-resistance: Ron ≤ 80 mΩ
- Forward Current: If = 10 A