ITRI’s 650 V Ga2O3 SBD (4-inch Wafer).
Technology Overview
ITRI’s 650 V Ga2O3 Schottky diodes and transistors achieve low forward voltage and high breakdown voltage through optimized epitaxial structures and field plate designs. The Schottky diode features a forward voltage of less than 1.2 V (@1 A), a maximum rated voltage of 650 V, and a low specific on-state resistance (Ron,sp ≤ 8 mΩ·cm²). Similarly, the Ga2O3 transistor offers a maximum rated voltage of 650 V, a threshold voltage under 2.5 V, and a low specific on-state resistance (Ron,sp ≤ 20 mΩ·cm²). These attributes make them highly suitable for high-efficiency power applications, such as EV chargers, DC-DC converters, and wind power systems. The wide bandgap properties of Ga2O3 further enhance the devices' ability to operate reliably in high-temperature and high-voltage environments, making them ideal for advanced power electronics.
Technology Features
650 V Ga2O3 Schottky Diode
- Forward voltage: Vf <1.2 V (@1 A)
- Maximum rated voltage: 650 V
- Specific on-state resistance: Ron,sp ≤ 8 mΩ‧cm2
650 V Ga2O3 Transistor
- Maximum rated voltage: 650 V
- Threshold voltage: Vth <2.5 V
- Specific on-state resistance: Ron,sp ≤ 20 mΩ‧cm2
ITRI’s 650 V Ga2O3 MOSFET (2-inch Wafer).