工業技術研究院

Dr. Lewis Terman is an iconic individual at IBM. He began pioneering research into semiconductor memory in 1964, leading to the development of IBM's first MOS memory. He invented the method of using C-V curves to measure oxide interface traps, which became a classic development in the semiconductor field. Dr. Terman has made countless distinguished contributions in semiconductors and electronics technology over the years at IBM, and his work has been widely recognized. He is a member of the US National Academy of Engineering, and is an AAAS Fellow and IEEE Fellow. Dr. Terman was elected the 2008 IEEE President, leading the world's largest and most authoritative technical professional association. Dr. Terman, since the 1980s, has been promoting the Taiwan Very-Large-Scale Integration Technology, Systems and Applications（VLSI-TSA）conference, encouraging interaction between Taiwan and the world in the area of semiconductors. His participation in this conference has spanned nearly two decades, and he is credited with helping enable the VLSI-TSA to become one of the most important IC technology conferences in the world. Through his efforts in this regard, he has made an outstanding contribution to Taiwan's semiconductor industry.