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工業技術研究院

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下世代半導體檢測技術

技術簡介

 下世代半導體檢測技術。
下世代半導體檢測技術。

先進半導體製程已達7奈米以下,製程薄膜厚度及關鍵尺寸越來越小,現有檢測技術面臨偵測極限。

特色與創新

工研院開發X光計量技術,藉由X光次奈米級解析能力,發展長波長X 光反射技術,量測微區(~50 μm x 50 μm)超薄次奈米膜厚度,最小膜厚可至1 nm;同時發展穿透式小角度X 光散射技術及訊號增強模組,用以線上量測7奈米、5奈米、3奈米製程之關鍵尺寸。

應用與效益

製程中的關鍵缺陷粒子尺寸已至20 nm 以下,且數量濃度低於103 顆/mL,然而目前溶液中奈米微粒量測技術存在能力斷層。工研院研發樣品導入系統及訊號增強模組,搭配溶液中微量金屬粒子量測分析技術-單粒子電感耦合電漿體質譜法(spICP-MS),成功突破量測技術斷層,並將國際之spICP-MS 尺寸偵測極限下推至4nm,數量濃度偵測極限下推至40 顆/mL,可滿足下世代半導體檢測需求。



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