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工業技術研究院

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矽基氮化鎵高功率與高頻技術

技術簡介

對於需要在高操作頻率以及大輸出功率應用環境下,半導體元件必需兼具高崩潰電壓(Breakdown voltage)與高飽和載子移動速率(Saturation Carrier Velocity)等特性。由於元件崩潰現象的產生的原因為載子受電場加速到足以觸發能隙間轟擊電離(Band-To-Band Impact Ionization)效應所致,因此寬能隙半導體材料先天就具有達到高崩潰電壓元件的優勢。氮化鎵材料除了擁有寬能隙(Eg=3.42 eV)特性之外, 其與n-型氮化鋁鎵的異質結構(AlGaN/GaN Heterostructure)因為極化差異在介面生成的二維電子氣(Two Dimensional Electron Gas;2DEG),形成高電子遷移率電晶體(High Electron Mobility Transistor;HEMT)。因此,以氮化鎵材料作為基底的元件非常適合在高頻、高功率、抗輻射及高溫環境下的應用。其實際應用包括供5G通訊基地台的高功率輸出放大器、軍用雷達,充電電池,和車用能源管理系統等。

特色與創新

 矽基氮化鎵高功率與高頻技術。
矽基氮化鎵高功率與高頻技術。

工研院致力於發展GaN基底的高電子遷移率電晶體之核心磊晶技術,如:
i.新型基板與緩衝層的開發
ii.磊晶層的應力與翹曲管理
iii.常關型(Normally-Off)超薄的閘極成長設計

於產業面上,工研院提供從基板與磊晶上游端直到下游模組設計的整合服務。
我們旨在提供產業一個具有有客製化的彈性,並與市場高度連結的一條龍式服務,以逐漸強化台灣在轉能系統以及5G產業鏈的創新性與自主性。



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