工業技術研究院

技術簡介

使用X-ray CT層像檢測方式，完成4吋SiC晶錠微管缺陷檢測。SiC晶錠樣品厚度1公分，可檢出微管尺寸最小直徑47 μm、長度1096 μm。將晶錠進行切片，以雷射3D顯微鏡觀察切割出的晶片表面，比對層像檢出的SiC微管缺陷大小與分布，比對結果一致。微管缺陷辨識則完成4種影像辨識演算法評選，提出一最佳辨識流程。在10,744筆缺陷資料中，共找到13,452條微管缺陷。硬體環境使用GPU運算，可將一組影像的微管缺陷辨識時間縮短至1.5小時完成(未含3D cube重建)。最後採用X-ray CT架構，完成層像檢測SiC晶錠原型機設計。

Abstract

Using X-ray CT detection method, the micropipe defect detection of 4-inch SiC ingot is completed. The SiC ingot sample is 1 cm thick, and the micropipe size that can be detected is 47 μm in diameter and 1096 μm in length. The ingot was sliced, and the surface of the cut wafer was observed with a laser 3D microscope. The size and distribution of SiC micropipe defects detected in the X-ray system were compared, and the comparison results were consistent with laser 3D microscope observation. For micropipe defect identification, four image identification algorithms were evaluated and an optimal identification process was proposed. A total of 13,452 micropipe defects were found among 10,744 cubes of X-ray images. The hardware environment uses GPU computing, which can shorten the time to identify micropipe defects in a set of images to 1.5 hours. Finally, the X-ray CT architecture was used to complete the design of a prototype machine for defect detection of SiC ingots.

技術規格

1.X光管電壓225 kV，光斑尺寸4 µm。 2.放大倍率4x，可使4吋晶錠完整成像於平板偵測器。 3.累積微管缺陷資料10,744筆。

Technical Specification

1. X-ray tube voltage 225 kV, spot size 4 µm. 2. The magnification is 4x, which can completely image the 4-inch SiC ingot on the flat-panel detector. 3. Accumulated 10,744 micropipe defect data.

技術特色

1.使用X-ray CT方式，拍攝4吋SiC晶錠進行層像分析觀測缺陷。 2.運用演算法提出一個微管缺陷辨識最佳流程。 3.完成層像檢測SiC晶錠原型機設計一式。

應用範圍

半導體材料，功率轉換器等產業。

接受技術者具備基礎建議（設備）

符合政府關於游離輻射使用的規定，如鉛室或X-ray使用執照。

接受技術者具備基礎建議（專業）

對於SiC材料和X-ray間的交互作用，及SiC晶錠內部具有的缺陷型態需有基礎知識理解。

聯絡資訊