工業技術研究院

技術簡介

利用聚焦後的小面積高能量雷射光，對太陽電池之非晶半導體薄膜如矽，氮化矽等來做快速的加熱達到淺層退火，使其變為多晶或單晶半導體薄膜的技術，減少傳統爐管退火整體高溫對其他膜層的影響，可使傳統4~5小時之退火時間減少至3分鐘之內。此技術同時亦可對多晶或單晶半導體薄膜進行雷射改質，提高多晶或單晶半導體薄膜的性能，增加其酸鹼耐受性，搭配溼式蝕刻，達到薄膜圖形化的目的。

Abstract

The technique involves using a focused, small-area, high-energy laser beam to rapidly heat amorphous semiconductor thin films like silicon and silicon nitride in solar cells, resulting in shallow annealing. This process transforms them into polycrystalline or monocrystalline semiconductor thin films. This method reduces the overall high-temperature impact on other layers that is common with traditional furnace annealing, cutting down the annealing time from the traditional 4-5 hours to under 3 minutes. Additionally, the technique can also be used for laser modification of polycrystalline or monocrystalline semiconductor thin films, enhancing their performance and acid-base resistance, and, when combined with wet etching, achieving film patterning.

技術規格

以本專利之雷射退火以及圖形化技術進行局部型雙面鈍化接觸(L-biPC)太陽電池製備，和使用傳統阻膠(Masking paste)以及爐管退火製程相比，可節省兩道以上步驟，並且雷射退火同時可將摻雜推深，F.F.提升2.16％，效率提高0.23％。

Technical Specification

The preparation of L-biPC solar cells using the laser annealing and patterning technology of this patent, compared to the traditional use of masking paste and furnace annealing for L-biPC cells, can save more than two steps in the process. Additionally, laser annealing can deepen doping, leading to a 2.16％ improvement in fill factor (F.F.) and a 0.23％ increase in efficiency.

技術特色

本專利提出一種穿隧氧化鈍化接觸電池的製造方法，包括：提供一半導體基板；沉積一氧化層；沉積一摻雜矽層；沉積一鈍化層；提供一雷射，照射在一特定區域；以及以蝕刻液去除特定區域以外之鈍化層，其中該雷射為脈衝式雷射，該雷射脈衝寬度為10 ps以下，該雷射波長為355 nm以下。

應用範圍

太陽光電相關產業

接受技術者具備基礎建議（設備）

現有太陽電池廠

接受技術者具備基礎建議（專業）

具備半導體、光電、能源及材料等相關經驗的研發人員與銷售業務

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