技術簡介
技術開發項目包括寬能隙材料鈍化技術、背面薄化鈍化層技術以及電極金屬化接觸技術。在寬能隙材料鈍化技術部分,以PECVD沉積6吋矽晶片正面之SiCx鈍化接觸薄膜,調整並優化製程壓力與鍍膜速率,SiCx平均厚度可達27.4 nm,均勻性5.39%,薄膜光學能隙大於1.82eV,鈍化能力iVoc>716 mV,J0 4.2 fA/cm2,薄膜特性適合作為正面寬能矽鈍化接觸層。
背面薄化鈍化層技術部分以無繞鍍PVD鍍膜技術製作多晶矽鈍化接觸薄膜,當厚度由120 nm薄化至60 nm時,依然可以維持鈍化效果iVoc 740 mV左右,於電池設計上可進一步降低背面多晶矽對長波長的電流吸收。
射極摻雜技術部分則採用異位摻雜製程,以擴散製程控制摻雜濃度,溫度與時間,達到阻質低於150Ω/sq時仍保有隱含填充因子iFF(%)>84.2%的結果。電極金屬化技術則採用小於5%含鋁銀膠進行網印燒結,以TLM方式量測接觸電阻,最低可得到2.05mΩ.cm2 (射極片電阻143ohm/sq),符合高效太陽能電池元件金屬化的要求。
Abstract
The technical development content of this project includes front side wide bandgap material passivation technology, rear side thin polysilicon passivation technology and contact metallization technology. In the part of wide bandgap material passivation technology, the doping concentration, working pressure and deposition rate were optimized to achieve the average thickness of 27.4nm SiCx layer with a uniformity of 5.39%, deposited by PECVD on the 6-inch silicon wafer.The optical band gap of the SiCx layer is 1.82 eV with iVoc 716 mV, and J0 4.2 fA/cm2, which meets the requirements for the front side wide band gap passivation layer.
In the part of rear side thin polysilicon passivation technology, PVD deposition technology was adopted to deposit no wrap around thin polysilicon layer. When polysilicon thickness is tuning from 120 nm to 60 nm, the iVoc still maintained at about 740 mV, while keeping a good passivation quality and could further reduce the rear side parasitic absorption.
In the part of contact metallization technology, ex-situ doping process was adopted to control the doping concentration, temperature and process time to achieve emitter Rsheet lower than 150Ω/sq with iFF(%)>84.2%. less than 5% aluminum-containing silver paste was selected for good ohmic contact formation due to optimum Al-Si alloy precipitation. The lowest contact resistance is 2.05mΩ.cm2 measured at Rsheet 143 ohm/sq by TLM method, which meets the specifications for high-efficiency solar cell component applications.
技術規格
SiCx平均厚度可達27.4 nm,均勻性5.39%,薄膜光學能隙大於1.82eV,鈍化能力iVoc>716 mV,J0 4.2 fA/cm2。背面薄化鈍化層以無繞鍍PVD鍍膜技術製作多晶矽鈍化接觸薄膜,厚度60 nm時,鈍化效果達iVoc 740 mV。射極摻雜技術採用異位摻雜製程,阻質低於150Ω/sq時仍保有隱含填充因子iFF(%)>84.2%的結果。電極金屬化採用小於5%含鋁銀膠進行網印燒結,接觸電阻可得到2.05mΩ.cm2 (射極片電阻143ohm/sq),符合高效太陽能電池元件設計的要求。
Technical Specification
The average thickness of SiCx can reach 27.4 nm, the uniformity is 5.39%, the optical energy gap of the film is greater than 1.82eV, the passivation capability iVoc>716 mV, J0 4.2 fA/cm2. The thin passivation layer on the back side is made of polycrystalline silicon passivation contact film using non-winding PVD coating technology. When the thickness is 60 nm, the passivation effect reaches iVoc 740 mV. The emitter doping technology uses an ex-situ doping process, and when the resistance is lower than 150Ω/sq, it still maintains the result of the implicit fill factor iFF(%)>84.2%. The electrode metallization uses less than 5% aluminum-containing silver glue for screen printing and sintering. The contact resistance can be 2.05mΩ.cm2 (emitter sheet resistance 143ohm/sq), which meets the requirements for metallization of high-efficiency solar cell components.
技術特色
1.完成N型電池射極寬能隙鈍化層開發
2.完成無繞鍍多晶矽鈍化層開發
3.完成相對應金屬化製程開發
應用範圍
高效率太陽能電池
接受技術者具備基礎建議(設備)
須具備N型TOPCon製程設備
接受技術者具備基礎建議(專業)
須具備N型TOPCon製程經驗
聯絡資訊
聯絡人:陳松裕 太陽光電技術組
電話:+886-6-3636821 或 Email:sungyuchen@itri.org.tw
客服專線:+886-800-45-8899
傳真:+886-6-3032029