技術簡介
開發半穿透鈣鈦礦太陽電池技術,包含鈣鈦礦吸收層塗佈技術、電子與電洞材料的特性研究、透明導電膜製程的探討,以及mini模組如何以雷射燒蝕進行內部串聯,最後以基版5.5 x 5.5 cm2,製作半穿透鈣鈦礦太陽mini模組最高效率可達15.8 %
Abstract
This project develops semi-transparent perovskite solar cell technology, including coating technology of the perovskite absorbing layer, research on the characteristics of electron and hole materials, discussion on the process of the transparent conductive film, and how to make series interconnection Perovskite minimodule by laser scribing. Finally, the highest efficiency of the semi-penetrating perovskite solar mini-module can reach 15.8 % with a substrate of 5.5 x 5.5 cm2.
技術規格
1. 塗佈溫度與溶劑比例則是影響薄膜結晶的重要關鍵,操作溫度過低造成塗佈後的前驅液溶劑會因表面張力而流動,致使薄膜表面形貌分布不均勻。但若操作溫度過高則會使溶劑快速揮發,造成薄膜表面出現破洞(不連續性)。
2. 低溫無機電子傳輸層SnO2穿透率可達98%(@800 nm)。
3. 當濺鍍ITO製程的O2/Ar流量比例為0.275 %時,膜厚1.2 μm之最低片電阻值為32 Ω/sq.,而穿透率T% = 83.9 %(@800 nm)。
Technical Specification
1. The coating temperature and solvent ratio are crucial factors influencing the crystallization of thin films. Operating at a too low temperature causes the solvent of the coated precursor to flow unevenly on the film surface due to surface tension, resulting in an uneven distribution of the film surface morphology. On the other hand, if the operating temperature is too high, the solvent evaporates rapidly, leading to the appearance of holes (discontinuities) on the film surface.
2. The transmittance of the low-temperature inorganic electron transport layer SnO2 can reach 98% (@800 nm).
3. When the O2/Ar flow ratio in the sputtering ITO process is 0.275%, the minimum sheet resistance of a 1.2 μm thick film is 32 Ω/sq., with a transmittance T% = 83.9% (@800 nm).
技術特色
活性面積4 cm2的半穿透鈣鈦礦太陽光電模組最高效率可達15.8 %;整體穿透度達70 % (@800 nm),奠定大尺寸半穿透鈣鈦礦太陽光電模組關鍵製程。
應用範圍
堆疊太陽電池
接受技術者具備基礎建議(設備)
相關鈣鈦礦太陽電池設備
接受技術者具備基礎建議(專業)
相關太陽電池基礎知識
聯絡資訊
聯絡人:吳世雄 太陽光電技術組
電話:+886-6-3636841 或 Email:shihhsiung@itri.org.tw
客服專線:+886-800-45-8899
傳真:+886-6-3032029