技術簡介
一種鈣鈦礦膜及其製造方法。所述方法包括以下步驟。於溫度介於100 °C至200 °C之間的基板上,以線性方向塗佈鈣鈦礦前驅物材料,其中所述鈣鈦礦前驅物材料的濃度介於0.05 M至1.5M之間。對所述鈣鈦礦前驅物材料進行紅外光照射,以固化所述鈣鈦礦前驅物材料而形成的化合物的薄膜。所述鈣鈦礦膜具有單一二維相結構或具有三維相結構混合單一二維相結構的結構。
Abstract
Provided are a perovskite film and a manufacturing method thereof. The method includes the following steps. A perovskite precursor material is coated in a linear direction on a substrate with a temperature between 100 °C and 200 °C, wherein the concentration of the perovskite precursor material is between 0.05 M and 1.5 M. The perovskite precursor material is irradiated with infrared light to cure the perovskite precursor material to form a thin film. The perovskite film has a single 2D phase structure or has a structure in which a 3D phase structure is mixed with a single 2D phase structure.
技術規格
鈣鈦礦前驅物材料的濃度介於0.05 M至1.5M之間。並進行紅外光照射,固化鈣鈦礦前驅物材料,形成之鈣鈦礦膜具有單一二維相結構或具有三維相結構混合單一二維相結構的結構。
Technical Specification
The concentration of the perovskite precursor material is between 0.05 M and 1.5 M. The perovskite precursor material is irradiated with infrared light to cure the perovskite precursor material to form a perovskite thin film. The perovskite film has a single 2D phase structure or has a structure in which a 3D phase structure is mixed with a single 2D phase structure.
技術特色
可透過基板加溫及紅外線照射製備具有單一二維相結構或具有三維相結構混合單一二維相結構。
應用範圍
鈣鈦礦太陽電池及堆疊太陽電池
接受技術者具備基礎建議(設備)
相關鈣鈦礦太陽電池設備
接受技術者具備基礎建議(專業)
相關太陽電池基礎知識
聯絡資訊
聯絡人:吳世雄 太陽光電技術組
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