工業技術研究院

技術簡介

光電與半導體產業長期依賴高GWP的含氟氣體（如CF₄、NF₃），導致溫室氣體排放居高不下，並面臨國際條約逐步禁用限制、碳稅與環保壓力，尋找低碳含氟替代氣體是重要淨零目標之一。傳統氣體製造過程繁瑣複雜，且潛在高昂環安成本；電漿固態氣體源技術利用固態高分子作為氣體來源，透過電漿與化學反應，即時合成低碳含氟氣體（如COF₂、F₂），其碳排當量僅為傳統氣體的千分之一。此技術不僅有效降低碳排放，還避免了氣體製造、鋼瓶運輸與存放中的爆炸與毒性風險，實現安全、經濟且環保的氣體合成與應用。在矽晶片移除測試中，PSG模組生成的低碳含氟氣體在適當參數下達到微米級移除速率（um/min），已符合產業應用需求，並實現81％的減碳效益。儘管目前效率為傳統CF₄製程的30％，但通過模組優化與氣體分離技術，未來性能將持續提升。

Abstract

"The optoelectronics and semiconductor industries have long relied on high-GWP fluorinated gases (e.g., CF₄, NF₃), resulting in persistently high greenhouse gas emissions. These industries are now facing increasing pressures from international treaties imposing phase-out restrictions, carbon taxes, and environmental regulations. Identifying low-carbon fluorinated gas alternatives has become a critical goal for achieving net-zero emissions. Traditional gas manufacturing processes are complex and cumbersome, with potentially high environmental and safety costs. The plasma-based solid-state gas source technology offers a novel solution by using solid polymers as the gas source. Through plasma and chemical reactions, low-carbon fluorinated gases (e.g., COF₂, F₂) can be synthesized in real-time. The carbon emissions of these gases are only one-thousandth of those from traditional gases. This technology not only significantly reduces carbon emissions but also eliminates the risks of explosion and toxicity associated with gas production, cylinder transportation, and storage, achieving a safe, economical, and environmentally friendly approach to gas synthesis and application. In silicon wafer removal tests, low-carbon fluorinated gases generated by the PSG module achieved a micron-level removal rate (µm/min) under appropriate parameters, meeting industrial application requirements and delivering an 81％ carbon reduction benefit. Although current efficiency is at 30％ of the traditional CF₄ process, ongoing optimization of the module and gas separation technology is expected to continuously enhance performance in the future."

技術規格

（１）電漿密度：2.2x10^11 cm-3 （２）矽移除效率:1.1 um/min"

Technical Specification

(1) Plasma density: 2.2 x 10^11 cm^-3 (2) Silicon removal efficiency: 1.1 um/min

技術特色

製程減碳效益＞30％

應用範圍

光電半導體設備之含氟相關製程(清潔蝕刻)

接受技術者具備基礎建議（設備）

真空電漿設備

接受技術者具備基礎建議（專業）

電子/機械/化工

聯絡資訊