工業技術研究院

技術簡介

碳化矽擴晶技術內容包含數值模擬、坩堝設計及製程參數調整，具備高擴晶速率及晶體邊緣不會產生多晶等優點，已完成6吋至8吋擴晶實驗驗證，可大幅縮短晶體尺寸放大時程。 而晶種保護層技術是在碳化矽晶種背面製作一層保護層，可以避免晶種在長晶過程中背面昇華、缺陷延伸問題，對於晶體品質提升有所幫助，目前已完成初步驗證。

Abstract

The diameter enlargement technology of silicon carbide includes numerical simulations, crucible design and process parameter adjustments. It possesses advantages such as high diameter enlargement rates and without polycrystals formed at the periphery of the SiC crystal. This technology has been verified through crystal growth experiments from 6 inches to 8 inches, which can significantly shorten the development timeline for crystal size enlargement. The seed protection technology involves coating a protective layer on the backside of the silicon carbide seed crystal. This layer serves to prevent problems such as sublimation and defect propagation from the backside of the seed during crystal growth. It contributes to improve crystal quality, and preliminary verification of this technology has been completed.

技術規格

1. 擴晶速率: 晶體每增厚10 mm，直徑增加 ≧ 8 mm。 2. 晶體周圍無多晶生成。 3. 保護層耐溫 ≧ 2100 ℃。

Technical Specification

1. Crystal enlargement rate: for every 10 mm thickness increase of crystal, the diameter increases by 8 mm. 2. No polycrystals formation around the crystal. 3. Protective layer temperature resistant ≧ 2100 ℃.

技術特色

1. 包含長晶模擬及擴晶坩堝設計，優選最佳組合。 2. 包含6吋至8吋實際擴晶驗證流程及結果分析。 3. 晶種保護層可保護晶種背面免於昇華，降低缺陷產生。

應用範圍

SiC長晶產業。

接受技術者具備基礎建議（設備）

具備高溫物理氣相沉積系統。

接受技術者具備基礎建議（專業）

具備SiC長晶經驗、薄膜沉積等相關知識。

聯絡資訊