技術簡介
本計畫之技術開發包括鈣鈦礦量子點合成、刮刀塗佈、MgF2阻水阻氣層及電池製程技術開發。在鈣鈦礦量子點合成部分,利用熱注射法以不同鹵素成分及比例可調控出不同能隙之鈣鈦礦量子點。在塗佈技術上,鈣鈦礦量子點溶液經純化及濃縮,再利用刮刀塗佈法製備鈣鈦礦量子點薄膜,經SEM分析結果顯示,薄膜厚度為481 nm (>400 nm),不均勻度43.6 nm (≤100 nm)。為了防止濺鍍造成的離子轟擊於電洞傳輸層上方蒸鍍MoOx緩衝層,效率可由2.93%提升至9.88%。且為了更有效提高載子收集,將於電池最上層蒸鍍Au電極,效率可再由9.88%提升至12.85%。最後利用MgF2作為阻水阻氣層防止大氣環境的水氣入侵,鈣鈦礦量子點半穿透太陽電池結構為FTO/c-TiO2/CsPbI3 QDS/Spiro-OMeTAD/MoOx/ITO/MgF2/Au,於大氣環境下進行老化測試100小時後,效率由12.52%降至12.1%,為原效率的96%。
Abstract
The technical development of this project includes the synthesis of perovskite quantum dots, blade coating, the MgF₂ barrier layer, and solar cell fabrication processes. Perovskite quantum dots were synthesized using the hot-injection method, enabling bandgap tuning by varying the composition and ratio of halogen elements. For the coating process, purified and concentrated perovskite quantum dot solutions were utilized to fabricate thin films via blade coating. SEM analysis showed a film thickness of 481 nm (>400 nm) with a non-uniformity of 43.6 nm (≤100 nm). To prevent ion bombardment caused by sputtering, a MoOx buffer layer was thermally evaporated above the hole transport layer, improving the efficiency from 2.93% to 9.88%. To further enhance carrier collection, Au electrodes were thermally evaporated onto the top layer of the solar cell, boosting the efficiency from 9.88% to 12.85%. Finally, MgF2 was used as a moisture and gas barrier layer to prevent atmospheric water vapor intrusion. The structure of the semi-transparent perovskite quantum dot solar cell is FTO/c-TiO2/CsPbI3 QDs/Spiro-OMeTAD/ MoOx/ITO/MgF2/Au. After 100 hours of aging tests under atmospheric conditions, the efficiency decreased from 12.52% to 12.1%, retaining 96% of the original efficiency.
技術規格
合成鈣鈦礦量子點能隙可調範圍:1.77eV-2.33eV
鈣鈦礦量子點薄膜刮刀塗佈厚度於481 nm,不均勻性可小於46.3 nm。
MgF2阻水組氣層,大氣環境下老化測試200小時,可維持原效率的90%。
鈣鈦礦量子點半穿透太陽電池製作,效率可>12%。
Technical Specification
The bandgap of synthesized perovskite quantum dots can be tuned across the range of 1.77 eV to 2.33 eV.
Perovskite quantum dot thin films fabricated via blade coating exhibit a thickness of 481 nm, with a non-uniformity of less than 46.3 nm.
MgF2 encapsulation layers demonstrate excellent moisture barrier properties, maintaining 90% of their initial performance after 200 hours of aging under ambient conditions.
Perovskite quantum dot semi-transparent solar cells can achieve power conversion efficiencies exceeding 12%.
技術特色
鈣鈦礦量子點合成可藉由不同鹵素成分與比例,可調整不同能隙之量子點,不僅可應用於太陽電池,亦可用於光電探測器、發光二極體和雷射等裝置。
MgF2阻水阻氣層可用於正式、反式及堆疊型太陽電池初步封裝,提高使用壽命。
應用範圍
鈣鈦礦量子點因能隙可調控特性,使其在多種應用場景中展現廣泛的適用性,低能隙適合太陽電池的吸光層,高能隙可用於光電探測器、發光二極體和雷射等裝置。特別是在發光二極體領域,其高效率和可調節的發光顏色成為主要優勢。
接受技術者具備基礎建議(設備)
化學合成廠商、真空設備廠商
接受技術者具備基礎建議(專業)
化學、材料、化工、光電等相關技術人員
聯絡資訊
聯絡人:林郁斌 先進光電與整合應用技術組
電話:+886-6-3636809 或 Email:YuPinLin@itri.org.tw
客服專線:+886-800-45-8899
傳真:+886-6-3032353