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工業技術研究院

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技術名稱: Trench DMOS 元件製程技術

技術簡介

根據製程與元件模擬設計之分離式功率電子開關, 採用溝槽式共用閘極結構設計與製程

Abstract

By using trench DMOS process, ERSO can produce low resistance & self protection power device.

技術規格

VBD≧30V、I≧15A、Rdson ≦10mΩ

Technical Specification

VBD≧30V、I≧15A、Rdson ≦10mΩ

技術特色

.Cell Density ≧32 Mcells/in2,溝槽式結構 .具Self Protection 功能,低Rdson

應用範圍

高功率、低阻抗之電子開關,如Notebook PC 之VRM

接受技術者具備基礎建議(設備)

具元件開發能力之半導體廠

接受技術者具備基礎建議(專業)

Power IC製程技術相關元件之設計、製造能力。

技術分類 系統

聯絡資訊

聯絡人:鍾佩翰 企畫與推廣組

電話:+886-3-5912777 或 Email:stephen.chung@itri.org.tw

客服專線:+886-800-45-8899

傳真:+886-3-5917690

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