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工業技術研究院

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技術名稱: Trench IGBT 元件製程技術

技術簡介

利用本所已有的Trench 製程,設計並製造600V,低Vce,sat的IGBT,使元件的功率消耗能更有效的降低。

Abstract

By using trench IGBT process, ERSO can produce 600V & low Vce,sat power device.

技術規格

. VBD≧600V . I≧30A . Vce,sat≦2.3V . tf≦350ns

Technical Specification

VBD≧600V I≧30A Vce,sat≦2.3V tf≦350ns

技術特色

Trench 技術,有效縮小元件面積及降低Vce,sat

應用範圍

主要應用於功率電路中(如電源供應器,不斷電系統等),擔任電源開關。

接受技術者具備基礎建議(設備)

一般半導體製造廠商

接受技術者具備基礎建議(專業)

Power IC製程技術相關元件之設計、製造能力

技術分類 製程

聯絡資訊

聯絡人:鍾佩翰 企畫與推廣組

電話:+886-3-5912777 或 Email:stephen.chung@itri.org.tw

客服專線:+886-800-45-8899

傳真:+886-3-5917690

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