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工業技術研究院

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技術名稱: 覆晶錫鉛凸塊植球技術

技術簡介

利用薄膜製程或化學鍍製程技術及電鍍或印刷技術將金(Gold)或銲錫(Solder)長於IC腳墊上;本項製程技術包括UBM(Under Ball Metallurgy)、Photolithography、Plating、Electroless Ni/Au Plating、Printing等技術。此凸塊適合應用於如TAB、Flip Chip等。

Abstract

.Wafer level process: including formation of UBM, solder ball deposition. .UBM: sputtering and electroless included .Solder ball deposition: electroplating or Printing processes.

技術規格

Bump Pitch (μm) <50 Bump Size (μm2) 35 X 35 Bump Height (μm) 20 Bump Composition Gold UBM Formation Sputtering Bump Formation Plating

Technical Specification

Bump Pitch (£gm) <50 Bump Size (£gm2) 35 X 35 Bump Height (£gm) 20 Bump Composition Gold UBM Formation Sputtering Bump Formation Plating

技術特色

將傳統應用於鋁晶片的凸塊及組裝製程經修改後應用於銅晶片上, 且已成功應用於覆晶組裝中, 將覆晶構裝結合將更能彰顯優越性。

應用範圍

液晶顯示器、汽車、行動電話、PCMCIA、電腦、Memory、Chipset、ASIC、CPU、RF-IC等。

接受技術者具備基礎建議(設備)

構裝廠、IC廠封裝部門。

接受技術者具備基礎建議(專業)

機械, 材料, 化學(化工)

技術分類 系統

聯絡資訊

聯絡人:溫國城 企畫與推廣組

電話:+886-3-5915654 或 Email:kcwen@itri.org.tw

客服專線:+886-800-45-8899

傳真:+886-3-5820412

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