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工業技術研究院

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技術名稱: 銅晶片覆晶凸塊植球與組裝技術

技術簡介

於銅晶片上利用濺鍍/電鍍及無電鍍的方式分別製作Ti/Cu及Ni/Au UBM並分別配合錫鉛電鍍及印刷技術來完成覆晶凸塊植球技術。此二種植球技術(電鍍及印刷)已通過高溫儲存及溫度循環等可靠度測試。而後者(無電鍍Ni/Au UBM +錫鉛印刷)又稱為低成本覆晶植球技術,已將其應用於I/O數為81且為周邊排列方式的測試載具上,加以組裝於基板並已通過可靠度測試。

Abstract

.UBM structure Ti/Cu/Ni/Au .Process: Sputtering, electro-plating, electroless-plating .Bumping: Palting and printing

技術規格

.Pitch: 200, 250, 540 μm .Solder Bump Height: 80, 100,130 μm .UBM: Ti/Cu, Electroless Ni/Au

Technical Specification

Pitch: 200, 250, 540 £gm Solder Bump Height: 80, 100,130 £gm UBM: Ti/Cu, Electroless Ni/Au

技術特色

將傳統應用於鋁晶片的凸塊及組裝製程經修改後應用於銅晶片上, 且已成功應用於覆晶組裝中, 將覆晶構裝與銅晶片結合將更能彰顯銅製程的優越性。

應用範圍

以銅導線製程的高階晶片,可應用Chipset、ASIC、CPU等。

接受技術者具備基礎建議(設備)

構裝廠、IC廠封裝部門。

接受技術者具備基礎建議(專業)

機械、材料、化學(化工)

技術分類 產品、製程

聯絡資訊

聯絡人:溫國城 企畫與推廣組

電話:+886-3-5915654 或 Email:kcwen@itri.org.tw

客服專線:+886-800-45-8899

傳真:+886-3-5820412

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