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工業技術研究院

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技術名稱: 低應力薄膜製程技術

技術簡介

我們發現大多數的微機電元件需使用低應力氮化矽薄膜做基材,本計畫利用低壓化學氣相沉積低應力氮化矽(Si-rich Nitride)薄膜。

Abstract

Deposited low stress SiXNy film by LPCVD system.The stress can lower 100MPa.It is useful material in MEMS process.A successful experiment in V-Groove.AFM Tip application.

技術規格

SIN Film Stress <= 100Mpa。

Technical Specification

Low stress SiXNy Film. Thickness< =1.7um Stress< =200MPa / < =100MPa Uniformity< 8%

技術特色

薄膜均勻性良好(uniformity小於8%,12 pcs/1batch) 。

應用範圍

氮化矽薄膜在微機電的應用常使用氮化矽薄膜做出懸臂與振動薄膜等支撐結構,亦用來作為電性隔離,Hard Mask,適當控制應力值,可用來作為結構的抬昇臂,利用該製程也成功開發出V-Groove及AFM-Tip的製造。

接受技術者具備基礎建議(設備)

參考資料:(如國際會議發表情形或智慧財產權已獲取情形…等) 1.低壓化學氣相沉積低應力氮化矽薄膜研發 2.面型微機電系統製程技術開發與服務

接受技術者具備基礎建議(專業)

具備爐管設備維修及製程人才。

技術分類 製程

聯絡資訊

聯絡人:溫國城 企畫與推廣組

電話:+886-3-5915654 或 Email:kcwen@itri.org.tw

客服專線:+886-800-45-8899

傳真:+886-3-5820412

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