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工業技術研究院

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技術名稱: 矽晶深蝕刻製程技術

技術簡介

如何得到高蝕刻速率、高選擇比、高非均向性、高蝕刻深度及高深寬比是矽深蝕刻製程技術中主要的課題。

Abstract

This technology uses fluorine basedgases,etches silicon at rates of 5um/min with an etch uniformity better than +/- 10% while maintaining a Si:SiO2 selectivity of more than 150:1.Etch depths is greater than 300um and profile angles of +/- 1 degree.

技術規格

. Etching depth: 10~300um . Etching rate: 1~3um/min

Technical Specification

Si vs SiO2 >150:1 trench size >300um Aspect ration >20 Profile control >890

技術特色

. High aspect ratio > 20 . 非均向性蝕刻垂直度>89°

應用範圍

矽深蝕刻製程技術是微機電系統 (MEMS)中非常重要的一環,可利用所製作之高深寬比結構設計製作加速度計STM,微感測器,熱泡式噴墨頭等。

接受技術者具備基礎建議(設備)

參考資料:(如國際會議發表情形或智慧財產權已獲取情形…等) ICP or DRIE

接受技術者具備基礎建議(專業)

半導體之乾蝕刻製程為基礎。

技術分類 製程

聯絡資訊

聯絡人:溫國城 企畫與推廣組

電話:+886-3-5915654 或 Email:kcwen@itri.org.tw

客服專線:+886-800-45-8899

傳真:+886-3-5820412

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