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工業技術研究院

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技術名稱: 9 GHz高速Si Bipolar元件製程技術

技術簡介

9.0 GHz截止頻率雙載子電晶體特為射頻模組設計而製作的分立式電晶體,其製作採取單複晶非自我對準(Single-Poly Non-Self-Aligned)結構,取其製程簡單且易與CMOS製程整合的特點,以便於後續單晶片模組的進一步整合;此元件的截止頻率可達到9.0 GHz以上,且均勻度可保持其變異量在10%以下。

Abstract

Through the emitter front-end module design, we can produce single chip integrate circuit & discrete transistor. By using Single-Poly Non-Self-Aligned structure, it is easily to integrate the CMOS process to further single chip module development. Because it is compatible to existing CMOS process, ERSO produced the 9GHz high-speed & uniformity below 10% Si bipolar device.

技術規格

電流增益(Current Gain, hFE): 100~150 閂住基極電阻(Pinched Base Resistance,RBS,P):< 20 Kohm/sq 截止頻率(Cut-Off Frequency, fT):> 9.0 GHz 射集極穿透電壓(Emitter-Collector Breakdown Voltage, BVCEO):> 12.0 Volt.

Technical Specification

Current Gain, hFE: 100~150 Pinched Base Resistance,RBS,P:< 20 Kohm/sq Cut-Off Frequency, fT:> 9.0 GHz Emitter-Collector Breakdown Voltage, BVCEO:> 12.0 Volt.

技術特色

簡易性 Simplicity, 產品製程簡單 . 相容性佳 Compatibility, 與CMOS製程相容 . 均勻性佳 Uniformity, 元件電性均勻度高

應用範圍

提供無線前端模組所需高頻電晶體零組件,如應用於呼叫器、無線滑鼠、無線鍵盤等產品上。

接受技術者具備基礎建議(設備)

具矽元件開發能力之半導體廠

接受技術者具備基礎建議(專業)

CMOS製程技術相關元件之設計、製造能力

技術分類 製程

聯絡資訊

聯絡人:鍾佩翰 企畫與推廣組

電話:+886-3-5912777 或 Email:stephen.chung@itri.org.tw

客服專線:+886-800-45-8899

傳真:+886-3-5917690

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