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工業技術研究院

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技術名稱: 矽晶片濕蝕刻角落補償製程技術

技術簡介

角落補償技術是為了以濕蝕刻方式製作含凸出結構的矽晶片時,可以達到特定形狀的微細加工技術。

Abstract

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技術規格

方形凸出結構的尺寸變化在設計值10%之內。

Technical Specification

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技術特色

濕法微細加工。

應用範圍

以濕蝕刻方式製作含凸出結構的矽晶片時,最常用到,如Center-boss結構。應用產品範圍包括壓力感測器、加速度計與微閥等。

接受技術者具備基礎建議(設備)

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接受技術者具備基礎建議(專業)

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技術分類 電子有機材料

聯絡資訊

聯絡人:何朝仁 電子材料及元件研究組

電話:+886-3-5916925 或 Email:MaxwellHo@itri.org.tw

客服專線:+886-800-45-8899

傳真:+886-3-5820386

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