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工業技術研究院

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技術名稱: GaN on GaN基板磊晶及元件技術

技術簡介

發光二極體成長在氮化鎵基板上,相較於傳統藍寶石基板擁有高效率、低成長時間和垂直元件特性,相當適合發展近紫外光到綠光之發光二極體。

Abstract

There are many advantages for LED grown on GaN substrate, including high performance, short running time and vertical device. These results are suitable to develop the LED from UVA to green wavelength.

技術規格

發光波長範圍: λ=365nm~460nm,順向導通電壓約等於藍寶石基板等級,發光效率高於藍寶石基板,成長時間小於藍寶石基板。 (藍寶石基板意思為LED成長在藍寶石基板上)

Technical Specification

Emitting wavelength: λ=365nm~460nm, forward voltage is nearly the same as sapphire, light output power is larger than sapphire, running time is shorter than sapphire. (sapphire: LED grown on sapphire)

技術特色

(1)簡易LED結構,較少的成長時間 (2)獨特磊晶結構提升發光效率

應用範圍

Light-emitting diodes

接受技術者具備基礎建議(設備)

需有磊晶成長技術或光電製程相關經驗之半導體廠商。

接受技術者具備基礎建議(專業)

需有磊晶成長技術或光電製程相關經驗之半導體廠商。

技術分類 光電元件

聯絡資訊

聯絡人:張弘文 企畫與推廣組

電話:+886-3-5918018 或 Email:hwchang@itri.org.tw

客服專線:+886-800-45-8899

傳真:+886-3-5915138

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