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工業技術研究院

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技術名稱: Bipolar-CMOS-DMOS (BCD) 功率積體電路製程整合技術

技術簡介

整合Bipolar、CMOS及DMOS製程於單一晶片中,可實現Power IC電路之製作。

Abstract

To integrate the Bipolar、CMOS及DMOS process in one chip, Power IC can achieve low cost & high voltage application.

技術規格

(1) High Voltage DMOS BVDSS>600V Normal Operation at 400V Vth>2V Rdson<370 ohm with 10V VGS Die Size< 4Kmil square Can easily interface with the low voltage section (2)CMOS can handle 15V operation with Vth~1V (3)NPN

Technical Specification

(1) High Voltage DMOS BVDSS>600V Normal Operation at 400V Vth>2V Rdson<370 ohm with 10V VGS Die Size< 4Kmil square Can easily interface with the low voltage section (2)CMOS can handle 15V operation with Vth~1V (3)NPN

技術特色

.整合BCD製程,可大幅節省封裝費用,降低功率耗損,提高系統效能。 .高壓DMOS部分耐壓可超過600V,低壓部分可5V操作。

應用範圍

電源管理系統、電源供應器、照明設備、家用設備、工業控制設備等。

接受技術者具備基礎建議(設備)

具元件開發能力之半導體廠

接受技術者具備基礎建議(專業)

CMOS製程技術相關元件之設計、製造能力

技術分類 系統

聯絡資訊

聯絡人:鍾佩翰 企畫與推廣組

電話:+886-3-5912777 或 Email:stephen.chung@itri.org.tw

客服專線:+886-800-45-8899

傳真:+886-3-5917690

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