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工業技術研究院

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技術名稱: 負型水性顯影PSPI材料技術

技術簡介

將Polyimide的結構中導入或摻混感光基團,使得Polyimide除能保有優異的性質外又兼具感光的特性,經曝光、顯影等製程後,再高溫環化形成聚亞醯(PI),大幅簡化使用一般非感光性聚亞醯胺之高解析度微影製程。

Abstract

none

技術規格

製程能力解析度≦3μm,形成聚亞醯胺後材料特性為Tg=298℃、Td≧550℃、Dk:3.4-3.6、Volume Resistivity≧10^16。

Technical Specification

none

技術特色

Polyimide具感光及高解析度微影製程能力,可簡化IC製程而降低成本,提高產品良率,有別於一般非感光性聚亞醯胺須與光阻材料搭配在製程的繁瑣性。

應用範圍

IC半導體之應用:鈍化膜(passivation coating)、應力緩衝層(stress butter bcoating)、α粒子遮蔽膜(α-particle barrier)、乾式蝕刻防護罩(dry-etch mask)、微機電(micromachines)和層間絕緣膜(interlayer dielectrics)。

接受技術者具備基礎建議(設備)

樹脂反應器、塗佈機、曝光機、顯影機。

接受技術者具備基礎建議(專業)

電子材料╱化工業者。

技術分類 電子有機材料

聯絡資訊

聯絡人:楊偉達 電子材料及元件研究組

電話:+886-3-5912979 或 Email:WeitaYang@itri.org.tw

客服專線:+886-800-45-8899

傳真:+886-3-5914944

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