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工業技術研究院

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技術名稱: 用於40G光通訊用IC及光偵測器的Carbon-doped SiGe/Si HBT製程技術

技術簡介

本計劃利用SiGe異質接面的材料特性,來製作超高速的雙載子電晶體(hetero junction bipolar transistor),進一步應用在光偵測器(optical detector)上,以迎接光通訊時代的來臨。利用SiGe材料成本低,可整合現有BiCMOS製程且可大量生產的優勢,致力於製作出速度達160GHz的SiGe HBT。此高速雙載子電晶體特為射頻前端模組設計,可製作為單晶積體化電路或分立式電晶體,其製作採取單複晶非自我對準(Single-Poly Non-Self-Aligned)結構,取其製程簡單且易與CMOS製程整合的特點,以便於後續單晶片模組的進一步整合。

Abstract

Through the SiGe hetero junction property, ERSO produced ultra high speed bipolar transistor to apply on optical detector. SiGe had low cost advantage & compatible to existing BiCMOS process, can produce the 160GHz SiGe HBT. By using Single-Poly Non-Self-Aligned structure, it is easily to integrate the CMOS process to further single chip module development.

技術規格

· 電流增益(Current Gain, hFE):>100 · 閂住基極電阻(Pinched Base Resistance, RBS,P):< 8 Kohm/sq · 截止頻率(Cut-Off Frequency, fT):> 120 GHz · 最大操作頻率(Maxima operation frequency) :> 40 GHz · 射集極穿透電壓(Emitter-Collector Breakdown Voltage, BVCEO):> 3.5 Volt.

Technical Specification

· Current Gain, hFE:>100 · Pinched Base Resistance, RBS,P:< 8 Kohm/sq · Cut-Off Frequency, fT:> 120 GHz · Maximum operation frequency:> 40 GHz · Emitter-Collector Breakdown Voltage, BVCEO:> 3.5 Volt.

技術特色

· 速度快 Highspeed,可滿足不同需求 · 簡易性 Simplicity,產品製程簡單 · 相容性佳 Compatibility,與CMOS製程相容 · 均勻性佳 Uniformity,元件電性均勻度高

應用範圍

· 矽鍺薄膜成長技術(SiGeC epitaxy growth technique) · 射頻積體電路(RFIC):應用於無線通訊系統與高速區域網路系統,提供如前端晶片組、PLL等高頻高速ICs產品製程技術 · 雙載子-金氧半積體電路(Bi-CMOS) · 光偵測器,光收發模組…等光電IC(opto-electric ICs)

接受技術者具備基礎建議(設備)

具矽元件開發能力之半導體廠

接受技術者具備基礎建議(專業)

CMOS製程技術相關元件之設計、製造能力

技術分類 製程

聯絡資訊

聯絡人:鍾佩翰 企畫與推廣組

電話:+886-3-5912777 或 Email:stephen.chung@itri.org.tw

客服專線:+886-800-45-8899

傳真:+886-3-5917690

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