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工業技術研究院

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技術名稱: 相變化薄膜製程技術

技術簡介

相變化記憶體(Phase Change Memory)是擁有高讀寫速度、高集積度、高耐久性、低耗電及抗輻射等多項優點之非揮發記憶體,本所採用相變化薄膜作為相變化記憶體之核心,本技術具有與傳統CMOS製程與週邊電路最高的相容性,是未來繼Flash、SRAM、DRAM之後極有潛力的下世代記憶體。

Abstract

Because of its non-volativity、non-destructive reading、fast access speed、high integration、high reliability、low power consumption & strong radiation resistance, Phase Change Memory had its potential to put into market after the massive Flash、SRAM、DRAM.

技術規格

1.薄膜阻值變化率>102 2.相變化時間<100ns

Technical Specification

Thin film resistivity for phase change>102 Time period for phase change<100ns

技術特色

利用下電極所產生的熱能來作為控制相變化薄膜阻值轉變的技術

應用範圍

傳統Flash、SRAM、DRAM所應用的範圍,如Desktop PC、Laptop PC、PDA、手機、隨身碟、數位相機、讀卡機等等

接受技術者具備基礎建議(設備)

具備相變化薄膜成長設備與蝕刻設備

接受技術者具備基礎建議(專業)

CMOS製程技術記憶體相關元件之設計、製造能力

技術分類 製程

聯絡資訊

聯絡人:鍾佩翰 企畫與推廣組

電話:+886-3-5912777 或 Email:stephen.chung@itri.org.tw

客服專線:+886-800-45-8899

傳真:+886-3-5917690

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