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工業技術研究院

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技術名稱: Sub-10nm接觸孔洞微縮製程技術

技術簡介

使用EBDW直接曝顯大於40nm的接觸孔洞, 再利用CD Shrinkage技術中的Thermal Reflow及SAFIER技術可以達成Sub-10nm的接觸孔洞。

Abstract

Use e-beam direct writing (EBDW) tool to expose / develop contact-hole with diameter of hole larger than 40nm. Then, use CD shrinkage technologies, like thermal reflow and SAFIER, to shrink the larger contact holes to become sub-10nm diameter of holes.

技術規格

利用電子束直寫技術及微距微縮技術如熱收縮及輔助膜微縮解析度增加技術可達成將40-100nm初始接觸孔洞微縮至小於10nm直徑之孔洞.

Technical Specification

Use EBDW with CD shrinkage technologies like thermal reflow and SAFIER to shrink contact-hole of 40-100nm initial size to become sub-10nm shrunk CD.

技術特色

利用較大電子束電流以高產率(High Throughput)曝顯較大微距後以微距微縮技術產生小於10奈米具60以上超高深寬比接觸孔洞。

應用範圍

Sub-10nm接觸面積需求的非揮發性記憶體元件技術. Sub-10nm High AR Tip Array應用產品技術, 例如IBM Millipede, MAPPER Lithography E-beam Source Tips, Multiple High-KV E-Gun Source, etc. 另外, 32nm Node以下的Interconnect技術亦是可被應用的範圍. 附註:本技術要提供給10-100nm或更大的接觸孔洞應用應是非常直覺具可行性的範圍.

接受技術者具備基礎建議(設備)

具MOS或CMOS製程之半導體廠, MEMS製造廠, 封測廠, 電子束量測或微影製造設備. 奈米壓印技術(Nano-Imprint)製造商, 光阻製造廠商

接受技術者具備基礎建議(專業)

CMOS製程技術相關製造能力, MEMS, E-beam Metrology (JEOL, Hitachi, Leica)及Lithography Tool Vendor (JEOL, Hitachi, Toshiba, MAPPER, Leica, CANNON), IBM, NII. 封測技術. 微影材料製造技術

技術分類 製程

聯絡資訊

聯絡人:鍾佩翰 奈米電子技術組

電話:+886-3-5912777 或 Email:stephen.chung@itri.org.tw

客服專線:+886-800-45-8899

傳真:+886-3-5917690

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