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工業技術研究院

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技術名稱: AMR-磁感測器製程技術

技術簡介

利用濺鍍、蝕刻、光微數影等方法把磁異向性材料(FeNi合金

Abstract

Fabrication of AMR-magnetic field sensor by means of sputtering, etching, photolithography, etc.

技術規格

R: 1-5k, Vout  30mV@5V、Field range : 0~250 Oe、Either single or two phases (90)

Technical Specification

R: 1-5k, Vout  30mV@5V、Field range : 0~250 Oe、Either single or two phases (90)

技術特色

較Hall sensor 靈敏

應用範圍

馬達、致動器等傳統產品、磁感應器、角度與位置定位等

接受技術者具備基礎建議(設備)

薄膜製程與蝕刻設備, 有裸露封裝資源

接受技術者具備基礎建議(專業)

具有薄膜製程及裸露封裝技術

技術分類 製程

聯絡資訊

聯絡人:鍾佩翰 奈米電子技術組

電話:+886-3-5912777 或 Email:stephen.chung@itri.org.tw

客服專線:+886-800-45-8899

傳真:+886-3-5917690

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