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工業技術研究院

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技術名稱: 奈米晶粒之非揮發性記憶體

技術簡介

傳統浮閘快閃記憶體只要穿隧氧化層有一漏電路徑,該元件所儲存的電荷可能因此而全部漏光,而奈米晶粒元件因為儲電的奈米晶粒周圍被不導電材質包圍,因此較不易發生上述缺點。

Abstract

For the floating gate device, once the leakage path is generated in the oxide layer, the stored charges will leak out. Nanocrystal in the oxide layer can solve this problem

技術規格

 ‧高效率奈米晶粒(層)成長技術  ‧高功函數閘極導電層與奈米晶粒(層)製程整合技術

Technical Specification

Endurance>104 Retention>107s Process compatible with CMOS process

技術特色

奈米晶粒之非揮發性記憶體著重於製程開發,主要策略是以協助產業先行開發驗證下世代關鍵技術,再俟技術成熟後與廠商洽談合作進行產品驗證,以落實產業運用。

應用範圍

傳統Flash、SRAM、DRAM所應用的範圍,如Desktop PC、Laptop PC、PDA、手機、隨身碟、數位相機、等等。

接受技術者具備基礎建議(設備)

具記憶體元件開發能力之半導體廠(ALD、PVD、CVD、RTA、Etching設備、黃光設備)

接受技術者具備基礎建議(專業)

半導體製程能力、電機、電子、材料、物理等背景、記憶體相關元件之設計、製造能力。

技術分類 製程

聯絡資訊

聯絡人:張順賢 奈米電子技術組

電話:+886-3-5913917 或 Email:shchang@itri.org.tw

客服專線:+886-800-45-8899

傳真:+886-3-5917690

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