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工業技術研究院

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技術名稱: 磁性記憶體技術

技術簡介

磁電阻式隨機存取記憶體(Magnetoresistive Random Access Memory)是擁有高讀寫速度、高集積度、高耐久性、低耗電及抗輻射等多項優點之非揮發記憶體,本所採用磁性穿隧接面(Magnetic Tunneling Junction)元件作為MRAM記憶體之核心,所呈現獨特的磁阻特性,具有與傳統CMOS製程與週邊電路最高的相容性,是未來繼Flash、SRAM、DRAM之後脫穎而出之終極記憶體(Ultimate Memory)。

Abstract

Because of its non-volatility, non-destructive reading, fast access speed, high integration, high reliability, low power consumption & strong radiation resistance, MRAM is a major emerging memory device. Through magnetic tunneling junction property, MRAM can perform its unique magnetoresistivity by using traditional CMOS process.

技術規格

‧MR Ratio >50%;RA(等效阻值) 1~2 kΩμm2 ‧MTJ Size(Short side)=0.36μm ‧Switching Current < 7 mA ‧以Synchronous介面驗證符合Embedded Memory之需求 ‧Instant-on 200MHz ARM system技術平台建立

Technical Specification

‧MR Ratio >50% ‧RA1~2 kΩμm2 ‧MTJ Size(Short side)=0.36μm ‧Switching Current < 7 mA ‧Synchronous Interface Embedded Memory ‧Instant-on 200MHz ARM system

技術特色

目前本計畫所開發之磁性記憶體技術已經過雛形晶片之驗證,與現有量產技術整合性高,可馬上導入量產,有助於提升台灣在非揮發性記憶體之技術能力。本技術並透過與台積電之合作得以驗證,台積電已成立MRAM技術團隊,預計短時間將導入量產,未來台積電將可憑藉已有之技術優勢創造持續領先之契機,產業效益極為顯著。

應用範圍

‧Smart Cellular Phone ‧Digital Camera, PDA ‧Embedded Memory ‧Portable USB Drive ‧Ultimate Memory

接受技術者具備基礎建議(設備)

‧ MRAM PVD ‧ MRAM Etcher ‧ Magnetic Furnace ‧ MRAM Tester ‧ 其它 CMOS 製程相關設備

接受技術者具備基礎建議(專業)

‧ 半導體製程能力 ‧ IC電路設計 ‧ 記憶體應用設計

技術分類 製程

聯絡資訊

聯絡人:鍾佩翰 奈米電子技術組

電話:+886-3-5912777 或 Email:stephen.chung@itri.org.tw

客服專線:+886-800-45-8899

傳真:+886-3-5917690

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