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工業技術研究院

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技術名稱: 電阻式記憶體技術

技術簡介

氧化物電阻式記憶體是一種利用電壓來改變氧化物電阻的新興非揮發性記憶體技術,其主要的特點在於元件結構簡單。工研院目前所開發的HfOx電阻式記憶體,其特性不但突破過去此記憶體開發的瓶頸,也展示出取代快閃記憶體的可能性。工研院的HfO2電阻式記憶體除了在製程上與現今CMOS製程完全相容外,也擁有低功率(V<2V, I<30uA)、高穩定性(P/E endurance >1010)、高速(<0.3ns)等優異的記憶體特性。另一方面此記憶體也能用製程和寫入驗證來提高良率。

Abstract

氧化物電阻式記憶體是一種利用電壓來改變氧化物電阻的新興非揮發性記憶體技術,其主要的特點在於元件結構簡單。工研院目前所開發的HfOx電阻式記憶體,其特性不但突破過去此記憶體開發的瓶頸,也展示出取代快閃記憶體的可能性。工研院的HfO2電阻式記憶體除了在製程上與現今CMOS製程完全相容外,也擁有低功率(V<2V, I<30uA)、高穩定性(P/E endurance >1010)、高速(<0.3ns)等優異的記憶體特性。另一方面此記憶體也能用製程和寫入驗證來提高良率。 技術簡介(英文) : Oxide based resistive memory (RRAM), that shows the memory characteristic through the voltage dependent resistance of oxide layer and attracts attention due to its simple device structure, is a kind of new nonvolatile memory technology. The HfOx based RRAM developed in ITRI not only makes breakthrough on RRAM development but also has great potential to replace the flash memory. In addition to be able to be easily integrated in modern CMOS technology, ITRI’s HfOx based RRAM has excellent memory performances, including low power (V<2V, I<30uA), high endurance(P/E endurance >1010) and high speed(<0.3ns). Furthermore, improved yield is demonstrated through the combination of improved fabrication process and optimized state verification。

技術規格

‧最大操作電流 <30 uA ‧最大操作電壓 < 2V ‧Retention: 10 years ‧Cycling: 10^10 ‧高低電阻比>3

Technical Specification

‧Max current <30 uA ‧Max voltage < 2V ‧Retention: 10 years ‧Cycling: 10^10 ‧R-ratio>3

技術特色

小於0.3 ns 操作。 小於 1 uA低功率。 小於 20 nm 尺寸。

應用範圍

‧Stand-alone RAM 獨立式記憶體 ‧Embedded Memory 嵌入式記憶體 ‧Data storage 資料存儲 ‧Hard drive replacement 硬式磁碟機代替 ‧Non-volatile logic/SRAM 非揮發邏輯/靜態隨機存儲器

接受技術者具備基礎建議(設備)

‧ ALD ‧ PVD ‧ CVD ‧ RTA ‧ Etching設備 ‧ 黃光設備

接受技術者具備基礎建議(專業)

‧ 半導體製程能力 ‧ 電機、電子、材料、物理等背景

技術分類 製程

聯絡資訊

聯絡人:張順賢 奈米電子技術組

電話:+886-3-5913917 或 Email:shchang@itri.org.tw

客服專線:+886-800-45-8899

傳真:+886-3-5917690

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