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工業技術研究院

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技術名稱: 用以轉化SiH4的電熱氧化裝置

技術簡介

市售處理半導體製程尾氣之SiH4的裝置,以電熱氧化腔(electro-heating/thermal type)及燃料燃燒腔(combustion type)居多,其原本非針對SiH4熱氧化設計,乃為處理全氟化物設計,該設計操作溫度範圍在800-1000℃,操作耗能偏高。本技術針對SiH4反應動力模式進行實驗研究,依據實驗的反應動力模式設計節能之電熱氧化腔,得操作在350℃-600℃,處理風量可大至300lpm,且可預處理微粒問題。相較於市售商品,就操作降低溫度有其進步性,就依據SiH4反應模式及微粒預處理設計部分具有新穎性。

Abstract

A device for oxidizing by electric heater is disclosed, which comprises: a hollow combustion portion provided with at least one gas inlet for entrance, at least one gas outlet for exit and at least one particle collection opening; a particle collection portion connecting to said combustion portion via said particle collection opening; at least one guiding plate positioned in said combustion portion; and at least one heating pipe positioned in said combustion portion; wherein said gas inlet, guiding plate, heating pipe and gas outlet are arranged properly so that the gas in the combustion portion will be heated and oxidized uniformly.

技術規格

處理或加熱風量範圍30-300lpm,處理SiH4濃度可達1.4%。

Technical Specification

Exhaust gas flow rate:30-300lpm, treatment for SiH4 up to 1.4%

技術特色

1.SiH4宏觀反應的反應動力模式,及其架構模式之觀念,該設計不侷限於處理SiH4,亦可針對待處理氣體種類。 2.本裝置不侷限於處理工業製程尾氣,亦可應用於氣流加熱(或預熱)使用。

應用範圍

該設計應用於半導體產業、光電產業、太陽能電板產業、軟性電子產業之尾氣處理,得應用於單一處理裝置;亦可結合其他處理套裝裝置,為該裝置之一部分。

接受技術者具備基礎建議(設備)

半導體產業、光電產業、太陽能電板產業、軟性電子產業之製程所排放之廢氣處理設備單元。

接受技術者具備基礎建議(專業)

光電、半導體業及其局部處理設備(local scrubber)供應商。

技術分類 02 N空氣污染防治

聯絡資訊

聯絡人:游生任 空污防制與安全技術組

電話:+886-3-5914928 或 Email:YSJ@itri.org.tw

客服專線:+886-800-45-8899

傳真:+886-35820378

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