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工業技術研究院

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技術名稱: 新世代低溫PFCs處理設備開發技術

技術簡介

PFCs溫室效應氣體在半導體製程中主要使用於CVD和蝕刻(Etch)兩個製程。現況市售商品以電熱、燃燒及觸媒等處理方式居多,其中以觸媒技術為最節省能源消耗的處理方式,然而觸媒技術僅適用於處理無微粒及SiH4製程尾氣(SiH4熱氧氣為SiO2微粒,此微粒易披覆於觸媒表面致使失去反應活性,並造成觸媒床阻塞),是故觸媒技術只能應用於少數CVD及etch製程,而此些不適用於觸媒處理的製程尾氣,僅能以電熱或燃燒方式處理,然而此二技術能源操作費用高,每年每台設備操作成本約為初設成本7~10%(20~30萬/台/年),將降低企業競爭力。 CVD製程因為使用大量SiH4、乾蝕刻製程則因為矽晶圓表面蝕刻,所以製程尾氣都含有大量SiO2細微粒。這些細微粒若無妥善處理將造成廠外白煙、氣體管路堵塞、毒害性氣體外洩及產品損失等問題。以ploy-light-dope製程為例,其SiH4使用量每分鐘約1.2~2公升,若無有效處理,10天內就會造成管路堵塞。因此細微粒的去除技術,對於高科技產業來說有很迫切的需求,也因此該技術在高科技製程尾氣處理極具市場價值。 含PFCs之CVD製程尾氣中,大部分製程同時會使用SiH4作沈積(Deposition)(七~八成以上CVD製程尾氣均含SiH4),若要節能(較低溫度)處理PFCs需要用觸媒技術,然而觸媒單一處理機制無法應用於含SiH4製程尾氣之處理,因為SiH4在電熱環境下將氧化為SiO2奈米微粒,若用於觸媒技術將造成觸媒表面披覆微粒,因此致使觸媒技術之應用面僅侷限在CVD製程二成~三成市場(現況市場中,電熱水洗或燃燒水洗市佔率高達八成以上)。所以在本案規劃下,於CVD製程尾氣處理,結合高效能電熱氧化單元(氧化SiH4)→微粒攔截單元(攔截SiO2微粒)→觸媒處理單元(削減PFCs)→水洗單元(處理酸氣),如此將可將觸媒技術應用面擴展到含SiH4製程尾氣之處理,相較於僅以電熱水洗或燃燒水洗為處理機制具有低操作成本優勢,可節省能源消耗,降低操作成本,且得以去除細微粒,降低白煙及微粒危害問題;另可以將觸媒技術的應用市場從二~三成提升至九成以上。 在性能上與現況技術的進步性在於:對於細粉塵(奈米微粒粉塵)微粒具有效處理功能、相對節省操作能源、安全性能佳等競爭優勢。

Abstract

The core technologies of local scrubber had been controlled by foreign makers for a long time. In recent years, the domestic local scrubber makers have developed substitute technologies. The test result shows that the destruction removal efficiency (DRE) of domestic catalyst on SF6 achieves 99.7% high at 598℃with the flow rate 296 lpm. From the mentioned above, the domestic techniques on developing high efficient catalyst have not only reached but also transcended the foreigners’. The new developed energy saving system reduces 30-50% cost on energy consumption, furthermore, is capable to remove deep submicron particle simultaneously. Moreover, the catalyst can be applied to all CVD and etch processes by new energy saving system effectively as well.

技術規格

1.SiH4削減效率≧95% 2.SiO2微粒處理≦100nm,效率≧95% 3.PFCs:NF3、SF6削減效率≧95% 4.HF、SiF4削減效率≧95% 5.系統反應溫度:350~ 700℃ 6.處理風量: CVD製程尾氣200 lpm/Etch製程尾氣50 lpm

Technical Specification

1.SiH4 DRE(destruction removal efficiency)≧95% 2.SiO2 removal efficiency(RE) for ≦100nm,RE≧95% 3.PFCs:NF3、SF6 DRE≧95% 4.HF、SiF4 DRE≧95% 5.Treatment temperature:350~ 700℃ 6.Capacity: CVD process 200 lpm/ Etch process50 lpm

技術特色

可同時處理SiH4、PFCs、奈米微粒,且相對節省能源。

應用範圍

高科技廠製程尾氣處理,含半導體廠、LCD、太陽能面板等產業。

接受技術者具備基礎建議(設備)

尾氣局部處理設備(local scrubber)商

接受技術者具備基礎建議(專業)

已有販售實積,具實廠經驗。

技術分類 工程與自動化研究

聯絡資訊

聯絡人:游生任 環境與安全技術組(N)

電話:+886-3-5914928 或 Email:YSJ@itri.org.tw

客服專線:+886-800-45-8899

傳真:+886-3-5820378

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