工業技術研究院

技術簡介

有機薄膜電晶體（organic field-effect transistors, OFETs）是近年來許多研究單位致力開發與研究的新興產業。OFETs應用於軟性顯示器具有低製程溫度及低成本優勢，然而目前很多OFETs的研究成果顯示其於大氣操作下有其不穩定性，以及經過長時間施加電壓下，其電流曲線產生飄移等，這些問題必須被解決，產品未來才能夠商品化。本計畫的研究方向即為透過新型可印式閘極介電層材料的開發，由根本上來解決OFETs不穩定的問題。為了符合可溶液製程的要求與與了符合Top gate 元件的建構，我們開發出特殊的新型具可光交聯的高分子，搭配適當的交聯劑，可做出具高絕緣性質的介電薄膜，其Ileakage為10-9 A/cm2，介電常數為可調，介於3~4。另外OFET元件特性其Ioff小於10-11A，on/off ratio大於105。此OFET元件還具有極佳的大氣穩定性與電性穩定性。

Abstract

The possibility of using organic field-effect transistors (OFETs) for applications in flexible displays has been of great scientific and technological interest due to the low cost and low temperature process. For practical applications of OFETs, the issue of electrical reliabilities is very critical. The main goal in this research area is to develop an air stable and robust gate dielectric for organic transistors. We demonstrated low-temperature photo-cured polymer composites which were suitable for solution processed top-gate OFETs structure. The composite comprised cinnamate-based poly(vinyl phenol), and the cross-linking agent poly(melamine-co-formaldehyde). The dielectric films exhibited excellent insulating properties; the leakage current was below 10-9 A/cm2. The device incorporating the composite gate dielectric operated effectively at supply voltages within 40 V, with a good mobility and high on/off ratio. In addition, the cinnamate-based polymer-containing devices showed excellent air stability and electrical stability.

技術規格

Ileakage為10-9 A/cm2，介電常數為可調，介於3~4。另外OFET元件特性其Ioff小於10-11A，on/off ratio大於105。此OFET元件還具有極佳的大氣穩定性與電性穩定性。

Technical Specification

the leakage current was below 10-9 A/cm2. The device incorporating the composite gate dielectric operated effectively at supply voltages within 40 V, with a good mobility and high on/off ratio. In addition, the cinnamate-based polymer-containing devices showed excellent air stability and electrical stability.

技術特色

具有低製程溫度及低成本優勢

應用範圍

光電半導體構裝

接受技術者具備基礎建議（設備）

材料化工業、半導體封裝廠商

接受技術者具備基礎建議（專業）

高分子材料、電子構裝

聯絡資訊