工業技術研究院

技術簡介

寬能隙功率元件擁有許多優點，例如高耐壓電場、高飽和電子速度、以及高散熱係數，使得這類元件更適合高功率、高頻率及高溫度環境的應用。採用寬能隙功率元件，能夠使得導通時及切換時的耗損能量降低，並使得整體運作之功率耗損可大幅的下降一半之多。此外，功率系統的體積、重量以及價格，可以因為耗能的下降及優異的散熱特性而得以大幅的減低。工研院將會專注於幾種關鍵的寬能隙功率元件開發。近日，我們已經完成元件及製程整合設計並獲得不錯的實驗結果。我們將會持續針對元件結構最佳化以及改善關鍵元件規格，以利加速元件的取代及擴大功率產品的應用範圍。

Abstract

Wide bandgap (WBG) power semiconductor devices have many advantages, such as high electric breakdown field, high saturated electron drift velocity and superior heat dissipation, making them even more suitable for high power, high frequency and high temperature applications. By introducing the WBG devices, both the conduction and switching loss can be decreased and therefore the overall power-loss in a power system can be significantly reduced by approximately a factor of 2. Expectedly, the overall system size, weight and cost can also be reduced. ITRI will focus on the development of some promising WBG devices, such as SiC-SBD, SiC-MOSFET, GaN-transistors. Recently, we have finished devices structure design and process integration development and got some good results. We will keep optimizing device structures and improving key specifications and thus speeding up the replacement of Si-based devices and expanding the application of WBG power devices.

技術規格

‧耐壓 > 600V ‧導通電流 > 6A ‧導通特徵阻值 < 20 mOhm-cm2

Technical Specification

.‧Blocking Voltage > 600V ‧On-state Current > 6A ‧Specific On-Resistance < 20 mOhm-cm2

技術特色

所開發的SiC-SBD功率元件，採取P型雜質離子植入形成接面能障區與蕭特基接面區共存之結構，使得元件擁有較低的導通電壓，並獲得不錯的元件漏電及耐壓能力。

應用範圍

‧DC-DC Converter 直流變壓器 ‧PFC, Power Supply 功率因子修正, 電源供應器 ‧Motor Drivers for EVs and HEVs 電動車/油電混合車用之摩托驅動模組 ‧Solar Inverters for PhotoVoltaic application 太陽能逆變壓器 ‧Wind Turbines and Smart Grid applications 風力發電與智慧電網應用

接受技術者具備基礎建議（設備）

‧ MOCVD ‧ALD ‧ PVD ‧ CVD ‧ Implanter ‧ RTA ‧ Etching‧Furnace設備 ‧ 接觸式黃光對準設備‧步進式黃光對準設備

接受技術者具備基礎建議（專業）

‧ 半導體製程能力 ‧ 電機、電子、材料、物理等背景

聯絡資訊