技術簡介
本研究提供一種光能轉換的觸媒材料之製備方法。該方法包含將具有IB族元素之正金屬離子溶液及IIIA族元素之正金屬離子溶液與包含VIA族元素負離子溶液混合得到一金屬混合液,以及利用液相沉積(Liquid phase deposition,LPD)薄膜技術,將上述金屬混合液在一基板上沉積一層包含IB族元素、IIIA族元素及VIA族元素之薄膜。
Abstract
Photo energy transformation catalysts and methods for fabricating the same are provided. The method comprises mixing a solution containing positive valence element of Group IB, a solution containing positive valence element of Group IIIA, and a solution containing negative valence element of Group VIA to obtain a mixing solution, and forming a film with the mixing solution by liquid phase deposition, wherein the film contain elements of Group IB, Group IIIA, and Group VIA.
技術規格
一種控制多成份半導體化合物之組成及結晶結構的配方與操作程序,可精準獲得所需的特定化合物薄膜;
(1)其材料配方由IB-IIIA族(group classifications)正金屬離子溶液,與VIA族負離子溶液,依IB:IIIA:VIA之莫耳比(molar ratio)為1:1~0.1:1~10之比例所組成之反應液;其中莫耳數的比值[IB/ IIIA]為0.01~10。
(2)藉由液相沉積(Liquid phase deposition,LPD)薄膜技術,在基板上沉積一層化合物薄膜。
(3)上述之薄膜,再經過鍛燒(annealing)的程序,使結晶結構更完整。
Technical Specification
The invention provides a method for fabricating photo energy transformation catalysts comprising preparing a composition by mixing a solution containing a positive valence element of Group IB, a solution containing a positive valence element of Group IIIA, and a solution containing a negative valence element of Group VIA, and forming a film from the composition by a liquid phase deposition process on a substrate, wherein the film comprises a compound having the elements of Group IB, the elements of Group IIIA, and the elements of Group VIA. Particularly, a molar ratio between the elements of Group IB, the elements of Group IIIA, and the elements of Group VIA is 1:1~0.1:1~10, and a molar ratio between the elements of Group IB and the elements of Group IIIA is 1 : 0.01~1 : 10. Further, the method comprises subjecting the film to an annealing treatment, thereby enhancing the crystallization configuration of the film.
技術特色
-AgInS半導體薄膜材料組成成分
-CBD薄膜製程開發
-超音波大面積鍍膜製程與設備
應用範圍
如光分解產氫、光記錄媒介物、Solar Cell、半導體雷射、LED、環保塗料等
接受技術者具備基礎建議(設備)
具產氫設備設計能力(如電解水,光解水)及太陽能電池製作測試經驗
接受技術者具備基礎建議(專業)
半導體材料、材料分析等基本概念
聯絡資訊
聯絡人:張文昇 新能源應用技術組
電話:+886-6-3636636 或 Email:chang0719@itri.org.tw
客服專線:+886-800-45-8899
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