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工業技術研究院

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技術名稱: CIGS太陽電池硒化後後段元件製備技術

技術簡介

針對非真空或真空等各種CIGS製程,自緩衝層起直至元件製作完成之所有製程含效率量測

Abstract

This technology is focus on the processes fabricated from CBD process to the end of cell efficiency analysis.

技術規格

緩衝層及i-ZnO厚度各約50nm, AZO厚度約500nm以下,片電阻30Ω/□

Technical Specification

The thickness of buffer and i-ZnO layer is 50nm respectively, the thickness of AZO layer is about 500nm, the sheet resistance can achieve 30Ω/□

技術特色

緩衝層的覆蓋率高,厚度均勻性佳,TCO(i-ZnO/AZO)鍍膜厚度均勻,電性佳

應用範圍

可應用範圍: 1.太陽能電廠 2.屋頂電池 3.BIPV 4.可撓曲電池 5.攜帶型充電設備。

接受技術者具備基礎建議(設備)

材料、化工、真空濺鍍及太陽光電基礎

接受技術者具備基礎建議(專業)

材料、化工、真空濺鍍及太陽光電基礎

技術分類 01 綠能環境

聯絡資訊

聯絡人:謝東坡 太陽光電技術組

電話:+886-6-3636816 或 Email:TP@itri.org.tw

客服專線:+886-800-45-8899

傳真:

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