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工業技術研究院

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技術名稱: 新興三維記憶體電路設計暨系統驗證

技術簡介

可應用於三維堆疊式記憶體之電路設計及系統驗證技術

Abstract

none

技術規格

記憶體功能晶片設計與測試技術開發 系統驗證 1Kb high density NVM (RRAM) macro Write/ Read time≦4us/2us VDDH≦5V Cell size≦4F^2 (F: Bitline Half-pitch)

Technical Specification

none

技術特色

本提案之標的是電阻式記憶體技術,電阻式記憶體具備操作電壓低、快速啟動與讀取、結構簡單化、可多位元記憶、耐久性佳、記憶元件面積縮小及非破壞性讀取等優勢,是目前唯一能與具備低成本競爭力的快閃記憶體(Flash)對抗的非揮發性記憶體。因此,雖然電阻式記憶體離商品化還有一段距離,但是三星、松下、…等國際大廠已積極進行研發,紛紛推出雛形產品,由此可見電阻式記憶體技術商品化之後,將深具市場潛力及競爭性。

應用範圍

半導體設計公司、IDM或記憶體製造廠商

接受技術者具備基礎建議(設備)

記憶體電路設計繪圖及操作量測機台能力

接受技術者具備基礎建議(專業)

須具半導體製造能力,或相關應用之設計能力。

技術分類 奈米科技

聯絡資訊

聯絡人:張順賢 奈米電子技術組

電話:03-5913917 或 Email:shchang@itri.org.tw

客服專線:+886-800-45-8899

傳真:03-5917690

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