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工業技術研究院

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技術名稱: 功率元件(SiC MOSFET)設計與驗證技術

技術簡介

建立SiC MOSFET之製程整合、模組及驗證技術。

Abstract

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技術規格

完成1200V SiC 溝槽型 MOSFET模組製程先期開發 完成1200V SiC 溝槽型MOSFET製程整合與元件製作 ?計畫溝槽型 MOSFET之技術規格為:Vbd > 1200V

Technical Specification

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技術特色

因為SiC MOSFET在原理上switching動作時沒有尾電流(tail current),所以可高速動作,且降低切換損失。而且,不需要太大的Chip面積不需太大即可達成低導通電阻不需太大故可做到低電容量與低Gate charge。Si元件的導通阻抗會隨著溫度上升而增加2倍以上; SiC的導通阻抗增加量則相對較小不需太大對於產品的小型化與節能化有所貢獻。此外,SiC MOSFET無需特殊的驅動電路,且工作頻率更高,使得設計人員能夠盡可能減少電源元件數量,降低電源成本和尺寸,並提高能效。因此,包括:Cree、Rohm及意法半導體等國際大廠都積極投入,深具市場潛力。

應用範圍

半導體製造廠商

接受技術者具備基礎建議(設備)

MOCVD ‧ALD ‧ PVD ‧ CVD ‧ Implanter ‧ RTA ‧ Etching‧Furnace設備

接受技術者具備基礎建議(專業)

須具半導體製造能力,或相關應用之設計能力

技術分類 奈米科技

聯絡資訊

聯絡人:張順賢 奈米電子技術組

電話:03-5913917 或 Email:shchang@itri.org.tw

客服專線:+886-800-45-8899

傳真:03-5917690

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