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工業技術研究院

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技術名稱: 噴灑頭設計與組件裝置技術

技術簡介

本技術為雙層緩衝及同心環流道方法降低Re之模組技術。以多區段緩衝達到壓力之均勻之後,再透過最佳化孔洞排列,控制速度均勻性,再降低Re數;另外以適應性氣幕技術突破因為基板旋轉與大量氣流衝擊所造成之迴流現象,可使反應氣體停留時間延長,有助於提升氣體使用率與鍍率

Abstract

This study presents an approach that allows a double-buffered and concentric circulation channel to achieve uniform flow in an MOCVD chamber. First, the buffer layer is filled with gas and then gas is uniformly spread into the chamber. Next, tubes are optimally arranged to achieve uniformity in gas velocity and hence reduce the Reynolds number. In addition, adaptive screen technology can inhibit airflow reflow phenomenon cased by rotation of the substrate.

技術規格

1.氣流場均勻性(Re<100) 2.增加10~20%氣體使用率 3.GaN膜厚均勻性<5%

Technical Specification

1.Reynolds number<100 2. Enhance gas rate of 20 to 30% 3.GaN film thickness uniformity<5%

技術特色

解決目前氣體使率低及孔洞易阻塞問題

應用範圍

各種CVD機台

接受技術者具備基礎建議(設備)

CVD機台

接受技術者具備基礎建議(專業)

具機械設計與分析

技術分類 光電與半導體製程設備

聯絡資訊

聯絡人:陳冠州 新興能源機械技術組

電話:+886-3-5918656 或 Email:ChenKC@itri.org.tw

客服專線:+886-800-45-8899

傳真:+886-3-5910350

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