『您的瀏覽器不支援JavaScript功能,若網頁功能無法正常使用時,請開啟瀏覽器JavaScript狀態』

跳到主要內容區塊

工業技術研究院

:::

技術名稱: 高深寬比金屬沉積技術

技術簡介

開發濕式晶種層技術取代傳統乾式濺鍍或PVD製程,能於深寬比10之孔洞內形成均勻之晶種層沉積。銅電鍍技術,能於直徑10um、深度104um,深寬比大於10之孔洞內完成銅填孔沉積,而無任何孔隙或包孔。

Abstract

To replace traditional sputtering or PVD fabrication by developing seed crystal layer technology. The aspect ratio of 10 and uniform deposition can be achieved. Copper plating technology can completely deposit the voids with aspect ratio 10, diameter 10um, and depth 104um.

技術規格

1.高深寬比濕式無電鍍銅晶種層沉積技術可在直徑10 um,深105 um,深寬比10:1之矽穿孔孔洞中完成厚度為250±50 nm的晶種層沉積。 2.開發高深寬比填孔銅電鍍液,能於直徑10um、深度104um,深寬比大於10之孔洞內完成銅填孔沉積,而無任何孔隙或包孔。

Technical Specification

1.High aspect ratio electroless seed layer deposition technique can produce 250±50 nm thick layer in an aspect ratio of 10 silicon void 2.To develop high aspect ratio copper plating solution, which can be used in an aspect ratio of 10 or larger void

技術特色

自主開發濕式晶種層與高深寬比電鍍填孔技術,能降低高深寬比填孔製程成本之50%,並可進一步應用至LED陶瓷基板與多層PCB板上。

應用範圍

半導體、微機電、LED封裝

接受技術者具備基礎建議(設備)

電鍍與無電鍍設備

接受技術者具備基礎建議(專業)

材料、化學、機械

技術分類 光電與半導體製程設備

聯絡資訊

聯絡人:黃萌祺 先進製造核心技術組

電話:+886-3-5915841 或 Email:ach@itri.org.tw

客服專線:+886-800-45-8899

傳真:+886-3-5826104

[{"text":"企業網","weight":13.0},{"text":"材化所","weight":11.5},{"text":"機械所","weight":10.0},{"text":"綠能所","weight":9.4},{"text":"生醫所","weight":8.0},{"text":"半導體","weight":6.2},{"text":"南分院","weight":5.0},{"text":"太陽能","weight":5.0},{"text":"課程","weight":5.0},{"text":"遠紅外線","weight":5.0},{"text":"雷射","weight":4.0},{"text":"LED","weight":4.0},{"text":"LED可見光","weight":3.0},{"text":"5G","weight":3.0},{"text":"工研人","weight":3.0},{"text":"電光所","weight":3.0},{"text":"綠能與環境研究所","weight":3.0},{"text":"機械","weight":3.0},{"text":"資通所","weight":2.0},{"text":"面板","weight":2.0},{"text":"文字轉語音","weight":2.0},{"text":"實習","weight":2.0},{"text":"無人機","weight":2.0},{"text":"生醫","weight":2.0},{"text":"3D","weight":2.0},{"text":"v2x","weight":2.0},{"text":"員工","weight":2.0},{"text":"地圖","weight":2.0},{"text":"太陽光電","weight":2.0},{"text":"材料與化工研究所","weight":1.0}]